Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Wilfried Von Ammon"'
Autor:
Lamine Sylla, Andreas Krause, Hui She, Earl C. Hixson, Joshua Russell, Nathan Stoddard, Franziska Wolny, Tine Uberg Nærland, Mariana I. Bertoni, Wilfried Von Ammon
Publikováno v:
Progress in Photovoltaics: Research and Applications. 26:324-331
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e87496c83250cf22e449b3cf32ba34d
https://doi.org/10.1002/pip.2984
https://doi.org/10.1002/pip.2984
Publikováno v:
Springer Handbook of Electronic and Photonic Materials ISBN: 9783319489315
The aggregation of instrinsic point defects (vacancies and Si interstitials) in monocrystalline silicon has a major impact on the functioning of electronic devices. While agglomeration of vacancies results in the formation of tiny holes (so-called vo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2faeeb6cdf1f61570377f50bc02cc0c
https://doi.org/10.1007/978-3-319-48933-9_5
https://doi.org/10.1007/978-3-319-48933-9_5
Autor:
Wilfried von Ammon
Publikováno v:
physica status solidi (a). 211:2461-2470
In the field of monosilicon crystal growth, the Czochralski (CZ) as well as the floating zone (FZ) method have grown to a mature technology over the last 60 years and, until today, the costs have been continuously reduced. The cost driving factors fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::687431905b74b48c031f0c771f94a8b8
https://doi.org/10.1002/pssa.201400043
https://doi.org/10.1002/pssa.201400043
Publikováno v:
ECS Journal of Solid State Science and Technology. 1:P269-P275
The precipitation of oxygen was investigated after rapid thermal annealing pre-treatments for 30 s in the range 1100-1250 {degree sign}C and after flash lamp annealing for 3 ms and 20ms with different irradiances up to melting of the wafer surface. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::91a4dab70a153b7932dd3be6fbd47256
https://doi.org/10.1149/2.008206jss
https://doi.org/10.1149/2.008206jss
Publikováno v:
ECS Transactions. 18:995-1000
The influence of vacancy supersaturation installed by RTA pre-treatments in CZ silicon wafers on oxide precipitate nucleation was investigated in the temperature range 700-1000 {degree sign}C. Precipitation is enhanced at 800 {degree sign}C and incre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9cb36c6ec713815bc111e738f851371
https://doi.org/10.1149/1.3096563
https://doi.org/10.1149/1.3096563
Autor:
Wilfried Von Ammon, Jaroslaw Dabrowski, Andreas Sattler, V. Akhmetov, Gudrun Kissinger, Dawid Kot
Publikováno v:
ECS Transactions. 16:97-108
Vacancy dependent nucleation curves were measured. They exhibit four maxima which all increase with increasing vacancy concentration. Even at 1000 {degree sign}C considerable nucleation takes place for high vacancy concentrations. The analysis of nuc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9766428cc4de652dc81d5d84f522528a
https://doi.org/10.1149/1.2980296
https://doi.org/10.1149/1.2980296
Publikováno v:
ECS Transactions. 16:207-218
In this work, we present results of investigations on Cu and Ni gettering efficiency for Czochralski silicon wafers containing various concentrations of oxygen and vacancies. In order to achieve suitable gettering sites for these impurities, the samp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f32f399b841012a538d9f1cf0439f22
https://doi.org/10.1149/1.2980304
https://doi.org/10.1149/1.2980304
Publikováno v:
ECS Transactions. 11:161-171
Ramped anneals with 1 K/min are suitable to characterize grown-in oxide precipitate nuclei. Fitting of experimental values to simulated values makes it possible to get information about the size of the nuclei. Theoretical simulations have shown that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c6790e4cba4c0ff934b85e192de1ccaf
https://doi.org/10.1149/1.2778658
https://doi.org/10.1149/1.2778658
The Czochralski technique is the most important crystal growth method for the industrial production of silicon with the highest perfection and fabrication rate of all crystal materials. This chapter describes the equipment and processing details of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8b3118ab574b3ea1194a4af030f0533
https://doi.org/10.1016/b978-0-444-63303-3.00002-x
https://doi.org/10.1016/b978-0-444-63303-3.00002-x
Autor:
Matthias Bickermann, Michal Bockowski, Martin Bruder, Kullaiah Byrappa, Shayan M. Byrappa, Peter Capper, Chuantian Chen, Hanna A. Dąbkowska, Antoni B. Dąbkowski, Jeffrey J. Derby, Thierry Duffar, Dirk Ehrentraut, Stefan Eichler, Jochen Friedrich, Tsuguo Fukuda, Zbigniew Galazka, Bing Gao, Juan Manuel García-Ruiz, Gunter Gerbeth, Martin E. Glicksman, Regina Hermann, Chuck Hsu, Mamoru Imade, Hiroyuki Ishibashi, Mitsuru Ishii, Teruo Izumi, Manfred Jurisch, Koichi Kakimoto, Fumino Kawamura, Takahiro Kawamura, Alexander F. Khokhryakov, Helmut Klapper, Krzysztof Kubiak, Igor N. Kupriyanov, Chung-wen Lan, Anke Lüdge, Mihoko Maruyama, Ma Eugenia Mendoza, Noriyuki Miyazaki, Hans-Joachim Möller, Abel Moreno, Yusuke Mori, Andris Muiznieks, Georg Müller, J. Brian Mullin, Kazuo Nakajima, Namratha Keerthiraj, Teruhiko Nawata, Michael Neubert, Arkadiusz Onyszko, Aleks G. Ostrogorsky, Fermín Otálora, Yuri N. Palyanov, Tania Paskova, Janis Priede, Igor Pritula, Victor G. Ralchenko, Helge Riemann, Peter Rudolph, Keshra Sangwal, Nobuhiko Sarukura, Christiane Schmidt, Yuh Shiohara, Jan Sieniawski, Dariusz Szeliga, Joop H. ter Horst, Robert Triboulet, Takao Tsukada, Joachim Ulrich, Janis Virbulis, Daniel Vizman, Wilfried von Ammon, Jiyang Wang, Yan Wang, Nico Werner, Jan Winkler, Hisanori Yamane, Haohai Yu, Andrew Yeckel, Masashi Yoshimura, Guochun Zhang, Evgeny Zharikov
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2335d1ac4398305c9b546436ceb24c51
https://doi.org/10.1016/b978-0-444-63303-3.01002-6
https://doi.org/10.1016/b978-0-444-63303-3.01002-6