Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Wilfried G. Aulbur"'
Publikováno v:
Auto Tech Review. 3:18-23
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e4f7a5dafe44f96f112510ed69ca0365
https://doi.org/10.1365/s40112-014-0568-z
https://doi.org/10.1365/s40112-014-0568-z
Autor:
Wilfried G. Aulbur, Gopika Kannan
Publikováno v:
Journal of Intellectual Capital. 5:389-413
Intellectual capital (IC), knowledge management and intangible assets are important factors in determining the value of an organization, as reflected in the growth of the knowledge management industry. There is however, a lack of effective measuremen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c9cdb249e58e8e3321b1e4a5d9f1b61
https://doi.org/10.1108/14691930410550363
https://doi.org/10.1108/14691930410550363
Publikováno v:
Solid State Communications. 124:63-66
A first-principle quasiparticle theory in the GW approximation is used to compute valence and conduction band offsets, VBO and CBO, respectively, for hexagonal and cubic AlN–GaN interfaces. We find type I band offsets that depend on the in-plane la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2bbbf7c3fe28b5eeda6896dc61c2ca3
https://doi.org/10.1016/s0038-1098(02)00326-5
https://doi.org/10.1016/s0038-1098(02)00326-5
Publikováno v:
Physical Review B. 62:7121-7132
One-particle wave functions and energies from Kohn-Sham calculations with the exact local Kohn-Sham exchange and the local density approximation (LDA) correlation potential [EXX(c)] are used as input for quasiparticle calculations in the GW approxima
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d42bcea87ea92cda9e4e9e1132d83e03
https://doi.org/10.1103/physrevb.62.7121
https://doi.org/10.1103/physrevb.62.7121
Autor:
Florian Kirchhoff, Furrukh S. Khan, John W. Wilkins, Jeongnim Kim, Wilfried G. Aulbur, Georg Kresse
Publikováno v:
Physical Review Letters. 83:1990-1993
We propose a di-interstitial model for the P6 center commonly observed in ion implanted silicon. The di-interstitial structure and transition paths between different defect orientations can explain the thermally activated transition of the P6 center
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ab22c64fa8e8492c252514e327889ba2
https://doi.org/10.1103/physrevlett.83.1990
https://doi.org/10.1103/physrevlett.83.1990
Publikováno v:
Physical Review B. 54:8540-8550
The polarization (P) dependence of the exchange-correlation energy (${\mathit{E}}_{\mathit{xc}}$) of semiconductors results in an effective field (${\mathrm{\ensuremath{\partial}}}^{2}$${\mathit{E}}_{\mathit{xc}}$/\ensuremath{\partial}${\mathit{P}}^{
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a21be9fe37713a80b0d912e77ac17a1c
https://doi.org/10.1103/physrevb.54.8540
https://doi.org/10.1103/physrevb.54.8540
Publikováno v:
Physical Review B. 51:10691-10700
We report a small coefficient of second-harmonic generation, ${\mathit{d}}_{123}$, in ${\mathrm{Si}}_{1}$${\mathrm{Ge}}_{1}$ [for instance, ${\mathit{d}}_{123}$=-1.9 pm/V for a Si(001) substrate] that is one order of magnitude smaller than previous c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a64b42724a6de08614cd1bed91f7a004
https://doi.org/10.1103/physrevb.51.10691
https://doi.org/10.1103/physrevb.51.10691
Autor:
Wilfried G. Aulbur
Publikováno v:
Auto Tech Review. 1:14-15
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd07a8a6058c5774269448528007f0ce
https://doi.org/10.1365/s40112-012-0003-2
https://doi.org/10.1365/s40112-012-0003-2
Autor:
Michael Müller, Wilfried G. Aulbur
Publikováno v:
Corporate Universities und E-Learning ISBN: 9783663056737
During the past two years the DaimlerChrysler Corporate University has been responsible for organizing Corporate Knowledge Management initiatives. [1] The present chapter focuses on practical issues regarding the organization, support, and impact of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::570a80aee73ba6cec488bfd3b1a4c26c
https://doi.org/10.1007/978-3-663-05672-0_20
https://doi.org/10.1007/978-3-663-05672-0_20
