Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Wildeson, Isaac"'
Autor:
Zhao, Zhibo, Singh, Akshay, Chesin, Jordan, Armitage, Rob, Wildeson, Isaac, Deb, Parijat, Armstrong, Andrew, Kisslinger, Kim, Stach, Eric A., Gradečak, Silvija
Publikováno v:
Applied Physics Express 2019
Commercial InGaN/GaN light emitting diode heterostructures continue to suffer from efficiency droop at high current densities. Droop mitigation strategies target Auger recombination and typically require structural and/or compositional changes within
Externí odkaz:
http://arxiv.org/abs/1710.01233
Akademický článek
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Autor:
Zhiwen Liang, Colby, Robert, Wildeson, Isaac H., Ewoldt, David A., Sands, Timothy D., Stach, Eric A., García, R. Edwin
Publikováno v:
Journal of Applied Physics; Oct2010, Vol. 108 Issue 7, p074313, 8p, 1 Color Photograph, 1 Diagram, 1 Chart, 9 Graphs
Autor:
Wildeson, Isaac H., Colby, Robert, Ewoldt, David A., Liang, Zhiwen, Zakharov, Dmitri N., Zaluzec, Nestor J., García, R. Edwin, Stach, Eric A., Sands, Timothy D.
Publikováno v:
Journal of Applied Physics; Sep2010, Vol. 108 Issue 4, p044303-43038, 8p, 4 Black and White Photographs, 2 Graphs
Akademický článek
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Autor:
Liang, Zhiwen, Wildeson, Isaac, Colby, Robert, Ewoldt, David, Zhang, Tong, Sands, Timothy, Stach, Eric, Benes, Bedrich, Garcia, R E
Publikováno v:
Birck and NCN Publications
(In, Ga)N nanostructures show great promise as the basis for next generation LED lighting technology, for they offer the possibility of directly converting electrical energy into light of any visible wavelength without the use of down-converting phos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______540::243a51ebd4797412e744068c158b4173
http://docs.lib.purdue.edu/nanopub/840
http://docs.lib.purdue.edu/nanopub/840
Autor:
Montgomery, K. H., Allen, C. R., Wildeson, Isaac H., Jeon, J. H., Ramdas, A. K., Woodall, Jerry M.
Publikováno v:
Birck and NCN Publications
We report on the characterization of gettered p-type GaP substrates for application in high-efficiency multijunction solar cells. A commercial zinc-doped GaP substrate was divided, with one piece soaked in a phosphorus-saturated gallium-aluminum melt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______540::ef41450744f487421dc9963613c2b5bf
http://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=2001&context=nanopub
http://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=2001&context=nanopub
Autor:
Wildeson, Isaac, Colby, Robert, Ewoldt, David, Liang, Zhiwen, Zakharov, Dmitri, Zaluzec, Nestor J, García, R. Edwin, Stach, E A, Sands, Timothy D
Publikováno v:
Birck and NCN Publications
Nanopyramid light emitting diodes (LEDs) have been synthesized by selective area organometallic vapor phase epitaxy. Self-organized porous anodic alumina is used to pattern the dielectric growth e templates via reactive ion etching, eliminating the n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______540::f5978b2cc5d3dce8d30bd1fa2b9c418d
http://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=1642&context=nanopub
http://docs.lib.purdue.edu/cgi/viewcontent.cgi?article=1642&context=nanopub
Autor:
Oliver, Mark H, Schroeder, Jeremy L, Ewoldt, David, Wildeson, Isaac, rawat, vijay, Colby, Robert, Cantwell, Patrick R, Stach, E A, Sands, Timothy D
Publikováno v:
Birck and NCN Publications
An intermediate ZrN/AlN layer stack that enables the epitaxial growth of GaN on (111) silicon substrates using conventional organometallic vapor phase epitaxy at substrate temperatures of similar to 1000 degrees C is reported. The epitaxial (111) ZrN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______540::9249e642804018f0a282dec094120285
http://docs.lib.purdue.edu/nanopub/143
http://docs.lib.purdue.edu/nanopub/143
Autor:
Kim, Jong Kyu, Krames, Michael R., Tu, Li-Wei, Strassburg, Martin, Armstrong, Andrew M., Crawford, Mary H., Koleske, Daniel D., Nelson, Erik C., Wildeson, Isaac, Deb, Parijat
Publikováno v:
Proceedings of SPIE; February 2017, Vol. 10124 Issue: 1 p101240W-101240W-1, 911162p