Zobrazeno 1 - 10
of 205
pro vyhledávání: '"Widiez, J."'
Autor:
Masante, C., de Vecchy, J., Mazen, F., Milesi, F., Di Cioccio, L., Pernot, J., Lloret, F., Araujo, D., Pinero, J.C., Rochat, N., Pierre, F., Servant, F., Widiez, J.
Publikováno v:
In Diamond & Related Materials June 2022 126
Autor:
Guilloy, K., Pauc, N., Gassenq, A., Niquet, Y. M., Escalante, J. M., Duchemin, I., Tardif, S., Dias, G. Osvaldo, Rouchon, D., Widiez, J., Hartmann, J. M., Geiger, R., Zabel, T., Sigg, H., Faist, J., Chelnokov, A., Reboud, V., Calvo, V.
Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce the energy difference between its direct and indirect band gaps. Howe
Externí odkaz:
http://arxiv.org/abs/1606.01668
Autor:
Gassenq, A., Tardif, S., Guilloy, K., Dias, G. Osvaldo, Pauc, N., Duchemin, I., Rouchon, D., Hartmann, J-M., Widiez, J., Escalante, J., Niquet, Y-M., Geiger, R., Zabel, T., Sigg, H., Faist, J., Chelnokov, A., Rieutord, F., Reboud, V., Calvo, V.
Publikováno v:
Appl. Phys. Lett. 108, 241902 (2016)
Ge under high strain is predicted to become a direct bandgap semiconductor. Very large deformations can be introduced using microbridge devices. However, at the microscale, strain values are commonly deduced from Raman spectroscopy using empirical li
Externí odkaz:
http://arxiv.org/abs/1604.04391
Autor:
Geiger, R., Zabel, T., Marin, E., Gassenq, A., Hartmann, J. -M., Widiez, J., Escalante, J., Guilloy, K., Pauc, N., Rouchon, D., Diaz, G. Osvaldo, Tardif, S., Rieutord, F., Duchemin, I., Niquet, Y. -M., Reboud, V., Calvo, V., Chelnokov, A., Faist, J., Sigg, H.
We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that enhance a biaxial strain of 0.16% up to 3.6% uniaxial tensile strain.
Externí odkaz:
http://arxiv.org/abs/1603.03454
Autor:
Reboud, V. *, Gassenq, A., Hartmann, J.M., Widiez, J., Virot, L., Aubin, J., Guilloy, K., Tardif, S., Fédéli, J.M., Pauc, N., Chelnokov, A., Calvo, V.
Publikováno v:
In Progress in Crystal Growth and Characterization of Materials June 2017 63(2):1-24
Akademický článek
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Autor:
Ohata, A., Bae, Y., Signamarcheix, T., Widiez, J., Ghyselen, B., Faynot, O., Clavelier, L., Cristoloveanu, S.
Publikováno v:
In Microelectronic Engineering 2011 88(7):1265-1268
Autor:
Widiez, J., Rabarot, M., Saada, S., Mazellier, J.-P., Dechamp, J., Delaye, V., Roussin, J.-C., Andrieu, F., Faynot, O., Deleonibus, S., Bergonzo, P., Clavelier, L.
Publikováno v:
In Solid State Electronics February 2010 54(2):158-163
Autor:
Rabarot, M., Widiez, J., Saada, S., Mazellier, J.-P., Lecouvey, C., Roussin, J.-C., Dechamp, J., Bergonzo, P., Andrieu, F., Faynot, O., Deleonibus, S., Clavelier, L., Roger, J.P.
Publikováno v:
In Diamond & Related Materials 2010 19(7):796-805
Autor:
Chaisantikulwat, W., Mouis, M., Ghibaudo, G., Cristoloveanu, S., Widiez, J., Vinet, M., Deleonibus, S.
Publikováno v:
In Solid State Electronics 2007 51(11):1494-1499