Zobrazeno 1 - 10
of 419
pro vyhledávání: '"Wide bandgap (WBG)"'
Publikováno v:
IEEE Access, Vol 12, Pp 169533-169544 (2024)
The integration of Wide Bandgap (WBG) semiconductors has enhanced the performance of switching power supplies in terms of both efficiency and power density. However, the fast-switching dynamics of these devices, particularly in Gallium Nitride (GaN)
Externí odkaz:
https://doaj.org/article/9c41a38879c94daea25794a92dd6853f
Autor:
Francois P. du Toit, Ivan W. Hofsajer
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 5, Pp 1671-1683 (2024)
Wide Bandgap devices are becoming more popular because of their higher switching performance. However, this higher performance comes at the cost of increased susceptibility to parasitic effects and leads to problems such as voltage overshoot and ring
Externí odkaz:
https://doaj.org/article/d1a907b6ae59456683b803f362d35f8c
Autor:
Francois P. Du Toit, Ivan W. Hofsajer
Publikováno v:
IEEE Access, Vol 12, Pp 38646-38663 (2024)
Recent advances in semiconductor technology have paved the way for ultra-fast switching capabilities. This increase in switching speed enhances efficiency, power density, and frequency but also increases overvoltage oscillations at the switching node
Externí odkaz:
https://doaj.org/article/c674441477ff4393a8394dd61ecd0af0
Publikováno v:
IEEE Access, Vol 12, Pp 7540-7550 (2024)
Currently, wide bandgap (WBG) power semiconductor devices such as low-resistance SiC MOSFETs and GaN HEMTs are being utilized extensively to achieve high efficiency. However, securing a sufficient margin voltage between the drain–source sensing vol
Externí odkaz:
https://doaj.org/article/5ef7d0c3da7e402393b7ba4cb6c12e2d
Publikováno v:
Alexandria Engineering Journal, Vol 74, Iss , Pp 627-641 (2023)
This paper studies and evaluates the advanced wide bandgap (WBG) semiconductor switches in DC drives system applied to a solar power tracker. Namely, Silicon Carbide (SiC)-based MOSFETs and Gallium Nitride (GaN)-based enhancement-mode high-electron-m
Externí odkaz:
https://doaj.org/article/80a0a4b7908a40f583e5077436bc38ac
Publikováno v:
Engineering Science and Technology, an International Journal, Vol 43, Iss , Pp 101435- (2023)
Dual active bridge DC-DC converters (DAB) are one of the bidirectional converters and mainly used in electric vehicles and micro grids. With the increasing number of electric vehicles in use, and the increasing amount of batteries in these vehicles a
Externí odkaz:
https://doaj.org/article/ec50c42741c74e959d2c6f4210b37782
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 89-97 (2022)
Breakdown capability of ${\beta }$ -Ga2O3/GaN heterojunction-based vertical p-n power diodes with mesa edge termination (ET) was comprehensively investigated using TCAD simulation. With $5~{\mu }\text{m}~{\beta }$ -Ga2O3 drift layer, the ideal breakd
Externí odkaz:
https://doaj.org/article/8289e5735ebb45bdafc68c4b66527a35
Publikováno v:
IEEE Access, Vol 10, Pp 51693-51707 (2022)
The drive inverter represents a central component of an electric vehicle (EV) drive train, being responsible for the DC/AC power conversion between the battery and the electrical machine. In this context, novel converter topologies adopting modern 60
Externí odkaz:
https://doaj.org/article/e49529587f5b4dfb819cada6f859b8cf
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