Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Wibo Van Noort"'
Publikováno v:
WiSNet
This paper introduces a Figure-of-Merit (FoM) for the evaluation of high-speed device performance. The proposed FoM is extracted from small-signal S-parameter measurements by manipulation of the Y-parameters. A group-delay value is calculated that ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38aec48a7f68e3dffdd046c12366c2de
https://doi.org/10.1109/wisnet.2018.8311568
https://doi.org/10.1109/wisnet.2018.8311568
Autor:
Scott Ruby, Akshey Sehgal, J. Klatt, Thanas Budri, Jamal Ramdani, Paul Allard, Scott Arsenault, Wibo van Noort, Albert Schnieders
Publikováno v:
Surface and Interface Analysis. 43:609-611
D & TOF-SIMS instruments are used in conjunction with other analytical techniques in order to identify the sources of metallic contamination and particle-type defects. In this paper D & ToF-SIMS are used to identify metals in the P-type buried layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9609994f5b53cf422ad444dcd97205f
https://doi.org/10.1002/sia.3668
https://doi.org/10.1002/sia.3668
Publikováno v:
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
A Y-Parameter based Figure-of-Merit (FoM) is proposed that can accurately predict large-signal Current-Mode Logic (CML) gate delay from small-signal S-parameter simulations/measurements. A differential-mode (DM) half circuit of an emitter-coupled dif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e5471f6c432dfda6269b50c7e3bebc2
https://doi.org/10.1109/bctm.2013.6798177
https://doi.org/10.1109/bctm.2013.6798177
Publikováno v:
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
Contact Electromigration (EM) constraining the performance for a SiGe hetero-junction bipolar transistor (HBT) is investigated. By incorporating a stacked contact structure with Via, the time-to-fail (TTF) increases by ten-fold and contact EM current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5da31e8d1fde5fd575f68a2d20772b04
https://doi.org/10.1109/bctm.2013.6798169
https://doi.org/10.1109/bctm.2013.6798169
Publikováno v:
2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
We present a comprehensive investigation of Early voltage (VA) versus drive current dependence for SiGe-pnp bipolar transistors fabricated on thick-film SOI, operating in normal (forward) and inverse (reverse) mode bipolar conditions. Thermal resista
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cc363497b8d1ac09cba0ea8552145d8
https://doi.org/10.1109/bctm.2011.6082738
https://doi.org/10.1109/bctm.2011.6082738
Autor:
Jon Tao, Don Getchell, Peyman Hojabri, Akshey Sehgal, Wipawan Yindeepol, Andre P. Labonte, Yaojian Leng, Alan Buchholz, Christopher C. Joyce, Saurabh Desai, Stefaan Decoutere, Robert A. Malone, Natasha Lavrovskaya, T. Krakowski, Wibo van Noort, Paul Allard, Jamal Ramdani, Craig Printy, Heather McCulloh, Jeff A. Babcock, Greg Cestra, Scott Ruby, Patrick Mccarthy
Publikováno v:
2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
A production released complementary-SiGe BiCMOS technology on SOI has been developed for high speed analog and RFIC applications. It features matched SiGe:C PNP and NPN transistors. The PNP shows cutting edge performance metrics with β·V A =17,000
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::827cb673e40050844ff7db2f363d95fc
https://doi.org/10.1109/bipol.2010.5667971
https://doi.org/10.1109/bipol.2010.5667971
Autor:
Wibo van Noort, Li Jen Choi, Paul Allard, Scott Ruby, Greg Cestra, Jeff A. Babcock, Christian Estonilo, Alexei Sadovnikov
Publikováno v:
2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
We present a comprehensive investigation of temperature dependence of breakdown voltage, DC current gain (β), and Early voltage (V A ) for complementary SiGe-npn and SiGe-pnp bipolar transistors fabricated on an advanced CBiCMOS technology on thick-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::416b01ac1e4715f749d1bc2a49dc9223
https://doi.org/10.1109/bipol.2010.5667898
https://doi.org/10.1109/bipol.2010.5667898