Zobrazeno 1 - 10
of 126
pro vyhledávání: '"Whitman, L. J."'
We use density-functional theory to study the structure of AlSb(001) and GaSb(001) surfaces. Based on a variety of reconstruction models, we construct surface stability diagrams for AlSb and GaSb under different growth conditions. For AlSb(001), the
Externí odkaz:
http://arxiv.org/abs/0706.4109
Autor:
Bracker, A. S., Scheibner, M., Doty, M. F., Stinaff, E. A., Ponomarev, I. V., Kim, J. C., Whitman, L. J., Reinecke, T. L., Gammon, D.
Most self-assembled quantum dot molecules are intrinsically asymmetric with inequivalent dots resulting from imperfect control of crystal growth. We have grown vertically-aligned pairs of InAs/GaAs quantum dots by molecular beam epitaxy, introducing
Externí odkaz:
http://arxiv.org/abs/cond-mat/0609147
Publikováno v:
Physical Review B, 71, 193307 (2005).
Cross sectional scanning tunneling microscopy (XSTM) and density functional theory have been used to characterize the structure of GaSb digitally doped with Mn. The Mn dopants are found in both isolated substitutional form as well as in large cluster
Externí odkaz:
http://arxiv.org/abs/cond-mat/0412629
Autor:
Sullivan, J. M., Boishin, G. I., Whitman, L. J., Hanbicki, A. T., Jonker, B. T., Erwin, S. C.
Publikováno v:
Phys. Rev. B 68, 235324 (2003) (6 pages)
We report first-principles calculations of the energetics and simulated scanning tunneling microscopy (STM) images for Mn dopants near the GaAs (110) surface, and compare the results with cross-sectional STM images. The Mn configurations considered h
Externí odkaz:
http://arxiv.org/abs/cond-mat/0307165
Publikováno v:
Phys. Rev. Lett. 83, 1818 (1999)
We describe in greater detail the exactly solvable microscopic model we have developed for analyzing the strain-mediated interaction of vacancy lines in a pseudomorphic adsorbate system (Phys. Rev. Lett., to appear). The model is applied to Ga/Si(112
Externí odkaz:
http://arxiv.org/abs/cond-mat/9905150
Publikováno v:
Science, 1991 Mar 01. 251(4998), 1206-1210.
Externí odkaz:
https://www.jstor.org/stable/2875305
Publikováno v:
Science, 1995 Sep . 269(5230), 1556-1560.
Externí odkaz:
https://www.jstor.org/stable/2889105
Autor:
Laracuente, A. R., Yang, M., Lee, W. K., Senapati, L., Baldwin, J. W., Sheehan, P. E., King, W. P., Erwin, S. C., Whitman, L. J.
Publikováno v:
Journal of Applied Physics; Jun2010, Vol. 107 Issue 10, p103723-103729, 6p, 1 Black and White Photograph, 1 Diagram, 1 Chart, 5 Graphs
Autor:
Krichevsky, A., Smith, M. J., Whitman, L. J., Johnson, M. B., Clinton, T. W., Perry, L. L., Applegate, B. M., O’Connor, K., Csonka, L. N.
Publikováno v:
Journal of Applied Physics; 1/1/2007, Vol. 101 Issue 1, p014701-N.PAG, 6p, 2 Black and White Photographs, 1 Diagram, 1 Graph
Autor:
Calvin, S., Miller, M. M., Goswami, R., Cheng, S.-F., Mulvaney, S. P., Whitman, L. J., Harris, V. G.
Publikováno v:
Journal of Applied Physics; 7/1/2003, Vol. 94 Issue 1, p778, 6p, 7 Graphs