W-band Metamorphic Low Noise and Power Amplifiers

Autor: Whelan, C. S., Herrick, K., Leoni, R. E., Marsh, P. F., Zhang, Y., Lardizabal, S., Hoke, W. E., Lichwala, S., Kotce, J., Balas, P., Kazior, T. E., Laighton, D.

Publikováno v: Whelan, C. S. ; Herrick, K. ; Leoni, R. E. ; Marsh, P. F. ; Zhang, Y. ; Lardizabal, S. ; Hoke, W. E. ; Lichwala, S. ; Kotce, J. ; Balas, P. ; Kazior, T. E. ; Laighton, D. (2003) W-band Metamorphic Low Noise and Power Amplifiers. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.

Low noise metamorphic amplifiers fabricated on our 4” manufacturing line demonstrate 3.5 dB oise figure at 92 GHz. By tailoring the device’s material, geometry and processing, our device designers have achieved 320 mW/mm, 10 dB of small signal ga

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ae8b693b7605444943de0450fedd3c50
http://amsacta.unibo.it/512/

High-frequency metamorphic p-i-n photodiodes and high-electron mobility transistor transimpedance amplifiers: Candidates for fiber-optic communications.

Autor: Hoke, W. E., Leoni, R. E., Whelan, C. S., Marsh, P. F., Jang, J. H., Adesida, I., Joshi, A. M., Wang, X.

Publikováno v: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 2002, Vol. 20 Issue 3, p1209-1212, 4p

Growth and characterization of metamorphic Inx(AlGa)1-xAs/InxGa1-xAs high electron mobility transistor material and devices with X=0.3-0.4.

Autor: Hoke, W. E., Lyman, P. S., Whelan, C. S., Mosca, J. J., Torabi, A., Chang, K. L., Hsieh, K. C.

Publikováno v: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 2000, Vol. 18 Issue 3, p1638-1641, 4p

Optimized cleaning and conditioning of a five station tetrakis diethylamido titanium chemical vapor deposition TiN chamber.

Autor: Whelan, C. S., Bulger, J. M., Dumont, A., Clark, J., Kuhn, M.

Publikováno v: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1999, Vol. 17 Issue 1, p194-200, 7p

Low energy electron beam top surface image processing using chemically amplified AXT resist.

Autor: Whelan, C. S., Tanenbaum, D. M., La Tulipe, D. C., Isaacson, M., Craighead, H. G.

Publikováno v: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1997, Vol. 15 Issue 6, p2555-2560, 6p