Zobrazeno 1 - 10
of 328
pro vyhledávání: '"Wheeler, V."'
Publikováno v:
In Journal of Differential Equations 25 July 2023 362:1-51
Akademický článek
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Autor:
Osofsky, M. S., Hernández, S. C., Nath, A., Wheeler, V. D., Walton, S., Krowne, C. M., Gaskill, D. K.
Reports of metallic behavior in two-dimensional (2D) systems such as high mobility metal-oxide field effect transistors, insulating oxide interfaces, graphene, and MoS2 have challenged the well-known prediction of Abrahams, et al. that all 2D systems
Externí odkaz:
http://arxiv.org/abs/1505.07053
Autor:
Xu, P., Ackerman, M. L., Barber, S. D., Schoelz, J. K., Qi, D., Thibado, P. M., Wheeler, V. D., Nyakiti, L. O., Myers-Ward, R. L., Eddy, Jr., C. R., Gaskill, D. K.
Publikováno v:
Japanese Journal of Applied Physics 52, 035104 (2013)
Atomic-scale topography of epitaxial multilayer graphene grown on 4H-SiC(0001) was investigated using scanning tunneling microscopy (STM). Bunched nano-ridges ten times smaller than previously recorded were observed throughout the surface, the morpho
Externí odkaz:
http://arxiv.org/abs/1501.06903
Autor:
Xu, P., Barber, S. D., Schoelz, J. K., Ackerman, M. L., Qi, D., Thibado, P. M., Wheeler, V. D., Nyakiti, L. O., Myers-Ward, R. L., Eddy Jr., C. R., Gaskill, D. K.
Publikováno v:
Journal of Vacuum Science and Technology B 31, 04D101 (2013)
Nanoscale ridges in epitaxial multilayer graphene grown on the silicon face of 4 degree off-cut 4H-SiC (0001) were found using scanning tunneling microscopy (STM). These nano-ridges are only 0.1 nm high and 25-50 nm wide, making them much smaller tha
Externí odkaz:
http://arxiv.org/abs/1501.05862
Autor:
Xu, P., Ackerman, M. L., Barber, S. D., Schoelz, J. K., Thibado, P. M., Wheeler, V. D., Nyakiti, L. O., Myers-Ward, R. L., Eddy Jr., C. R., Gaskill, D. K.
Publikováno v:
Surface Science 617, 113 (2013)
Scanning tunneling microscopy (STM) images are obtained for the first time on few layer and twisted multilayer epitaxial graphene states synthesized on n+ 6H-SiC a-plane non-polar surface. The twisted graphene is determined to have a rotation angle o
Externí odkaz:
http://arxiv.org/abs/1501.04872
Autor:
Xu, P., Qi, D., Schoelz, J. K., Thompson, J., Thibado, P. M., Wheeler, V. D., Nyakiti, L. O., Myers-Ward, R. L., Eddy Jr., C. R., Gaskill, D. K., Neek-Amal, M., Peeters, F. M.
Publikováno v:
Carbon 50, 75 (2014)
Epitaxial graphene is grown on a non-polar n+ 6H-SiC m-plane substrate and studied using atomic scale scanning tunneling microscopy. Multilayer graphene is found throughout the surface and exhibits rotational disorder. Moir\'e patterns of different s
Externí odkaz:
http://arxiv.org/abs/1412.8680
Autor:
Nath, A., Currie, M., Wheeler, V. D., Tadjer, M. J., Koehler, A. D., Robinson, Z. R., Sridhara, K., Hernandez, S. C., Wollmershauser, J. A., Robinson, J. T, Myers-Ward, R. L., Eddy, Jr., C. R., Rao, M. V., Gaskill, D. K.
Graphene-metal contact resistance is governed by both intrinsic and extrinsic factors. Intrinsically, both the density of states bottleneck near the Dirac point and carrier reflection at the graphene-metal interface lead to a high contact resistance.
Externí odkaz:
http://arxiv.org/abs/1411.5114
Autor:
Huang, J., Alexander-Webber, J. A., Janssen, T. J. B. M., Tzalenchuk, A., Yager, T., Lara-Avila, S., Kubatkin, S., Myers-Ward, R. L., Wheeler, V. D., Gaskill, D. K., Nicholas, R. J.
Publikováno v:
J. Phys.: Condens. Matter 27 164202 (2015)
Energy relaxation of hot Dirac fermions in bilayer epitaxial graphene is experimentally investigated by magnetotransport measurements on Shubnikov-de Haas oscillations and weak localization. The hot-electron energy loss rate is found to follow the pr
Externí odkaz:
http://arxiv.org/abs/1409.6267
Autor:
Neek-Amal, M., Xu, P., Qi, D., Thibado, P. M., Nyakiti, L. O., Wheeler, V. D., Myers-Ward, R. L., Eddy Jr., C. R., Gaskill, D. K., Peeters, F. M.
Publikováno v:
Phys. Rev. B 90 (6), 064101 (2014)
Twisted graphene layers produce a moir\'e pattern (MP) structure with a predetermined wavelength for given twist angle. However, predicting the membrane corrugation amplitude for any angle other than pure AB-stacked or AA-stacked graphene is impossib
Externí odkaz:
http://arxiv.org/abs/1407.1189