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Publikováno v:
Thin Solid Films. 519:6662-6666
We investigated the mechanism of cracking between the inter/intra-metallic dielectric (IMD) silicon oxide films after anneal process. The cracks were initiated at the top corner of aluminum lines, then propagated through the silicon oxide films. Thus
Publikováno v:
2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop.
In IMD study Rs reduction and better uniformity as well as lower capacitance were achieved in 60 nm 2 Giga Bit NAND flash memory. It alos fabricated 70 % air-gap of gate and calculated interference reduction in 45 nm device when it was applied throug