Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Whang Je, Woo"'
Autor:
Whang Je Woo, Seung Gi Seo, Bonggeun Shong, Hwi Yoon, Yujin Lee, Miso Kim, Hyungjun Kim, Il Kwon Oh, Seung-Min Chung
Publikováno v:
The Journal of Physical Chemistry C. 125:18151-18160
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d036590e31a3d52f0e04b545d81dda7
https://doi.org/10.1021/acs.jpcc.1c03518
https://doi.org/10.1021/acs.jpcc.1c03518
Autor:
Jong Hyun Ahn, Gyeong Hee Ryu, Youngjun Kim, Seongil Im, Woo Hee Kim, Jun Hyung Lim, Daeguen Choi, Jae Bok Lee, Jusang Park, Whang Je Woo, Sunhee Lee, Zonghoon Lee, Hyungjun Kim
Publikováno v:
Applied Surface Science. 494:591-599
The effective synthesis of two-dimensional (2D) heterostructures is essential for their use in electronic devices. In this study, by using atomic layer deposition (ALD), 2D transition metal dichalcogenide (TMD) heterostructures were grown by a halide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0be57e409e15db68cd43a1db4abcd53e
https://doi.org/10.1016/j.apsusc.2019.07.168
https://doi.org/10.1016/j.apsusc.2019.07.168
Autor:
Jeong Gyu Song, Kyunam Park, Jusang Park, Kyung Yong Ko, Whang Je Woo, Sangyoon Lee, Zonghoon Lee, Dong-Hyun Kim, Hyungjun Kim, Jung Hwa Kim, Youngjun Kim
Publikováno v:
ACS Applied Materials & Interfaces. 10:34163-34171
Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) have attracted considerable attention as promising building blocks for a new generation of gas-sensing devices because of their excellent electrical properties, superior response, flexibil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24f2b54b7ea60a20ff6883e2619f27bd
https://doi.org/10.1021/acsami.8b10455
https://doi.org/10.1021/acsami.8b10455
Publikováno v:
Metals and Materials International. 24:652-656
The improved electrical properties of Cu-gate thin-film transistors (TFTs) using an ink-synthesizing process were studied; this technology enables a low-cost and large area process for the display industry. We investigated the film properties and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15c25b1ca2ccd5314d2a9b7cc1cfe083
https://doi.org/10.1007/s12540-018-0045-3
https://doi.org/10.1007/s12540-018-0045-3
Autor:
Hanearl Jung, Woo-Hee Kim, Jae Min Myoung, Whang Je Woo, Hyungjun Kim, Bo Eun Park, Yun Cheol Kim, Christian Dussarrat, Satoko Gatineau, Il Kwon Oh, Su Jeong Lee
Publikováno v:
ACS Applied Materials & Interfaces. 10:2143-2150
We report the effect of Y2O3 passivation by atomic layer deposition (ALD) using various oxidants, such as H2O, O2 plasma, and O3, on In–Ga–Zn–O thin-film transistors (IGZO TFTs). A large negative shift in the threshold voltage (Vth) was observe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c2229acb608313c10db4b7a33f7c198
https://doi.org/10.1021/acsami.7b14260
https://doi.org/10.1021/acsami.7b14260
Autor:
Jusang Park, Kyung Yong Ko, Jun Hyung Lim, Whang Je Woo, Yuxi Zhao, Youngjun Kim, Dong-Hyun Kim, Zonghoon Lee, Hyungjun Kim, Gyeong Hee Ryu, Jeong Gyu Song, Sunhee Lee
Publikováno v:
Nanoscale. 10:9338-9345
The efficient synthesis of two-dimensional molybdenum disulfide (2D MoS2) at low temperatures is essential for use in flexible devices. In this study, 2D MoS2 was grown directly at a low temperature of 200 °C on both hard (SiO2) and soft substrates
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ab3e8b7e32d61950ed447420e6a61a5
https://doi.org/10.1039/c8nr00108a
https://doi.org/10.1039/c8nr00108a
Autor:
Younghun Hwang, Chinh Tam Le, Jusang Park, Soon Cheol Hong, Whang Je Woo, Sang Wook Han, Yong Soo Kim, Chang Won Ahn, Manil Kang, Hyungjun Kim, Tri Khoa Nguyen, Won Seok Yun
Publikováno v:
Advanced Materials Interfaces. 8:2170080
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e22bed583c435bfd2f3c54ce085120c
https://doi.org/10.1002/admi.202170080
https://doi.org/10.1002/admi.202170080
Autor:
Sang Wook Han, Yong Soo Kim, Won Seok Yun, Soon Cheol Hong, Jusang Park, Whang Je Woo, Younghun Hwang, Hyungjun Kim, Tri Khoa Nguyen, Chang Won Ahn, Manil Kang, Chinh Tam Le
Publikováno v:
Advanced Materials Interfaces. 8:2100428
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::149e442b91bdb88189cde0483b218468
https://doi.org/10.1002/admi.202100428
https://doi.org/10.1002/admi.202100428
Autor:
Youngjun Kim, Jusang Park, Hyungjun Kim, Whang Je Woo, Dong-Hyun Kim, Sangyoon Lee, Seung-Min Chung
Publikováno v:
Advanced Materials. 33:2005907
Transition metal chalcogenides (TMCs) are a large family of 2D materials with different properties, and are promising candidates for a wide range of applications such as nanoelectronics, sensors, energy conversion, and energy storage. In the research
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::da2ca454da60713b3c0922af1a17b737
https://doi.org/10.1002/adma.202005907
https://doi.org/10.1002/adma.202005907
Autor:
Whang Je Woo, Seunggi Seo, Taewook Nam, Youngjun Kim, Donghyun Kim, Jeong-Gyu Song, Il-Kwon Oh, Jun Hyung Lim, Hyung-Jun Kim, Hyungjun Kim
Publikováno v:
Applied Surface Science. 541:148504
We developed doping technique of transition metal dichalcogenides based on atomic layer deposition (ALD) of oxide thin films. In this study, we deposited ALD Al2O3 overlayer using various oxidant including iso-propyl alcohol (IPA) and ethanol and inv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42cb7e1fcb7490c93e125a4cdd738913
https://doi.org/10.1016/j.apsusc.2020.148504
https://doi.org/10.1016/j.apsusc.2020.148504