Výsledky vyhledávání - "Weyers Markus"

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Telecom-Band SPDC in AlGaAs-on-Insulator Waveguides

Autor: Placke, Marlon, Schlegel, Jan, Mann, Felix, Della Casa, Pietro, Thies, Andreas, Weyers, Markus, Tränkle, Günther, Ramelow, Sven

Widespread commercial adoption of telecom-band quantum-key-distribution (QKD) will require fully integrated, room-temperature transmitters. Implementing highly efficient spontaneous parametric down-conversion (SPDC) on a platform that offers co-integ

Externí odkaz: http://arxiv.org/abs/2312.07300

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AlGaN/AlN heterostructures: an emerging platform for nonlinear integrated photonics

Autor: Gündogdu, Sinan, Pazzagli, Sofia, Pregnolato, Tommaso, Kolbe, Tim, Hagedorn, Sylvia, Weyers, Markus, Schröder, Tim

In the rapidly evolving area of integrated photonics, there is a growing need for materials that satisfy the particular requirements of increasingly complex and specialized devices and applications. Present photonic material platforms have made signi

Externí odkaz: http://arxiv.org/abs/2312.03128

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Carbon doping of GaN: Proof of the formation of electrically active tri-carbon defects

Autor: Gamov, Ivan, Richter, Eberhard, Weyers, Markus, Gärtner, Günter, Irmscher, Klaus, Kristallzüchtung, Leibniz-Institut für, Berlin, Germany, Ferdinand-Braun-Institut, Höchstfrequenztechnik, Leibniz-Institut für, Physics, Institute of Experimental, Freiberg, TU Bergakademie, Freiberg

Carbon doping is used to obtain semi-insulating GaN crystals. If the carbon doping concentration exceeds $5*10^{17}$ $cm^{-3}$, the carbon atoms increasingly form triatomic clusters. The tri-carbon defect structure is unambiguously proven by the isot

Externí odkaz: http://arxiv.org/abs/2004.02914

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