Zobrazeno 1 - 10
of 1 405
pro vyhledávání: '"Weyers M"'
Autor:
Gamov, I., Lyons, J. L., Gärtner, G., Irmscher, K., Richter, E., Weyers, M., Wagner, M. R., Bickermann, M.
This work examines the carbon defects associated with recently reported and novel peaks of infrared (IR) absorption and Raman scattering appearing in GaN crystals at carbon ($^{12}C$) doping in the range of concentrations from $3.2*10^{17}$ to $3.5*1
Externí odkaz:
http://arxiv.org/abs/2209.10893
Publikováno v:
In Journal of Crystal Growth 15 February 2023 604
Autor:
Walde, S., Hagedorn, S., Coulon, P.-M., Mogilatenko, A., Netzel, C., Weinrich, J., Susilo, N., Ziffer, E., Matiwe, L., Hartmann, C., Kusch, G., Alasmari, A., Naresh-Kumar, G., Trager-Cowan, C., Wernicke, T., Straubinger, T., Bickermann, M., Martin, R.W., Shields, P.A., Kneissl, M., Weyers, M.
Publikováno v:
In Journal of Crystal Growth 1 February 2020 531
Autor:
Hagedorn, S., Walde, S., Mogilatenko, A., Weyers, M., Cancellara, L., Albrecht, M., Jaeger, D.
Publikováno v:
In Journal of Crystal Growth 15 April 2019 512:142-146
Autor:
Mogilatenko, A., Knauer, A., Zeimer, U., Netzel, C., Jeschke, J., Unger, R.-S., Hartmann, C., Wollweber, J., Dittmar, A., Juda, U., Weyers, M., Bickermann, M.
Publikováno v:
In Journal of Crystal Growth 1 January 2019 505:69-73
Autor:
Freitas, J.A., Jr., Culbertson, J.C., Glaser, E.R., Richter, E., Weyers, M., Oliveira, A.C., Garg, V.K.
Publikováno v:
In Journal of Crystal Growth 15 October 2018 500:111-116
Autor:
Bugge, F., Bege, R., Blume, G., Feise, D., Sumpf, B., Werner, N., Zeimer, U., Paschke, K., Weyers, M.
Publikováno v:
In Journal of Crystal Growth 1 June 2018 491:31-35
Publikováno v:
In Journal of Crystal Growth 1 February 2018 483:297-300
Autor:
Zubkov, V. I., Melnik, M. A., Solomonov, A. V., Tsvelev, E. O., Bugge, F., Weyers, M., Traenkle, G.
The results of measurements and numerical simulation of charge carrier distribution and energy states in strained quantum wells In_xGa_{1-x}As/GaAs (0.06 < x < 0.29) by C-V-profiling are presented. Precise values of conduction band offsets for these
Externí odkaz:
http://arxiv.org/abs/cond-mat/0307107
Publikováno v:
In Journal of Crystal Growth 1 December 2017 479:16-21