Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Wesley D. Helgeson"'
Autor:
Guillermo M. Loubriel, D.J. Brown, M.W. O'Malley, Alan Mar, Wesley D. Helgeson, Albert G. Baca, Fred J. Zutavern, Harold P. Hjalmarson, R.A. Falk
Publikováno v:
IEEE Transactions on Plasma Science. 26:1393-1402
The longevity of high gain GaAs photoconductive semiconductor switches (PCSSs) has been extended to well over ten million pulses by reducing the density of carriers at the semiconductor to metal interface. This was achieved by reducing the density in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a4f89c52d1dad74a78a14a3de2e508c
https://doi.org/10.1109/27.736024
https://doi.org/10.1109/27.736024
Autor:
Wesley D. Helgeson, Harold P. Hjalmarson, T.A. Plut, Fred J. Zutavern, M.W. O'Malley, Guillermo M. Loubriel, D.J. Brown, Albert G. Baca, M. Ruebush
Publikováno v:
IEEE Transactions on Plasma Science. 25:124-130
Optically activated GaAs switches operated in their high-gain mode are being used or tested for pulsed power applications as diverse as low-impedance, high-current firing sets in munitions; high impedance, low-current Pockels cell or Q-switch drivers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a302ce83d926d8a8d91aa6380bd478f
https://doi.org/10.1109/27.602482
https://doi.org/10.1109/27.602482
Autor:
Guillermo M. Loubriel, P.J. Stabile, D.L. McLaughlin, Arye Rosen, Wesley D. Helgeson, M.W. O'Malley, Fred J. Zutavern
Publikováno v:
IEEE Transactions on Electron Devices. 38:692-695
Progress toward the triggering of high-power photoconductive semiconductor switches (PCSSs) with laser diode arrays, is reported. An 850-W optical pulse from a laser diode array was used to trigger a 1.5-cm-long switch that delivered 8.5 MW to a 38.3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a0d53ae2d8ea664c22d49de76dcbfdc9
https://doi.org/10.1109/16.75190
https://doi.org/10.1109/16.75190
Autor:
Fred J. Zutavern, Wesley D. Helgeson, B.B. McKenzie, Guillermo M. Loubriel, M.W. O'Malley, D.L. McLaughlin, L. P. Shanwald
Publikováno v:
IEEE Transactions on Electron Devices. 37:2472-2477
Experiments have been performed to develop photoconductive semiconductor switches (PCSSs) for pulsed power applications that cannot be implemented with traditional high-power switching technology. A scalable lateral PCSS configuration has been tested
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7720039e44ba491bd3569fb0e7571537
https://doi.org/10.1109/16.64520
https://doi.org/10.1109/16.64520
Autor:
R. R. Gallegos, Guillermo M. Loubriel, Fred J. Zutavern, Wesley D. Helgeson, T.A. Plut, M.W. O'Malley, Albert G. Baca, Harold P. Hjalmarson
Publikováno v:
Twenty-First International Power Modulator Symposium, Conference.
A high peak power impulse pulser that is controlled with high gain, optically triggered GaAs Photoconductive Semiconductor Switches (PCSS) has been constructed and tested. The system has a short 50 ohm line that is charged to 100 kV and discharged th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::821ea3298ade411b7b2ec4ca3f6aa6f4
https://doi.org/10.1109/modsym.1994.597058
https://doi.org/10.1109/modsym.1994.597058
Publikováno v:
Eighth IEEE International Conference on Pulsed Power.
Switching properties are reported for high gain photoconductive semiconductor switches (PCSS). A 200 ps pulse width laser was used in tests to examine the relations between etectric field, rise time, delay, and minimum optical trigger energy for swit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::830b4e8b38f7bacc69a5190aa32162ac
https://doi.org/10.1109/ppc.1991.733226
https://doi.org/10.1109/ppc.1991.733226
Autor:
Wesley D. Helgeson, M.W. O'Malley, G.J. Denison, Guillermo M. Loubriel, Fred J. Zutavern, D.L. McLaughlin
Publikováno v:
Twentieth Conference Record on Power Modulator Symposium.
Characteristics of current filamentation are reported for high gain photoconductive semiconductor switches (PCSS). Infrared photoluminescence is used to monitor carrier recombination radiation during fast initiation of high gain switching in large (1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64c430dc4313d507d092cf056a87833e
https://doi.org/10.1109/modsym.1992.492631
https://doi.org/10.1109/modsym.1992.492631
Autor:
R. R. Gallegos, Fred J. Zutavern, M.W. O'Malley, Guillermo M. Loubriel, T.A. Plut, Harold P. Hjalmarson, Albert G. Baca, Wesley D. Helgeson
Publikováno v:
Twenty-First International Power Modulator Symposium, Conference.
The discovery of current filaments in GaAs photoconductive semiconductor switches (PCSS) raised concerns about the location and density of the current distribution during high gain switching. This paper describes experiments using fiber-optic coupled
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e93f4205ea4bf73bbaf4e0a224a3d0e
https://doi.org/10.1109/modsym.1994.597057
https://doi.org/10.1109/modsym.1994.597057
Autor:
Guillermo M. Loubriel, D.L. McLaughlin, M.W. O'Malley, Fred J. Zutavern, Wesley D. Helgeson, T. Burke
Publikováno v:
Eighth IEEE International Conference on Pulsed Power.
The lock-on effect is a high gain, high field switching mechanism that has been observed in GaAs and InP. This switching mode is exciting because the amount of light required to trigger it is small when compared to triggering the same switch at low f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2254d02f27101594714a6891d2c55a71
https://doi.org/10.1109/ppc.1991.733228
https://doi.org/10.1109/ppc.1991.733228
Autor:
Guillermo M. Loubriel, M.W. O'Malley, Wesley D. Helgeson, R. R. Gallegos, Fred J. Zutavern, Harold P. Hjalmarson
Publikováno v:
Applied Physics Letters. 64:3323-3325
Pictures are presented of the time evolution of current filaments during optically triggered, high gain switching in GaAs. Two filaments are triggered with two laser diode arrays and the time delay between them is varied. When the filament that is tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84ed4b5c6908a8abbb0b011772377eba
https://doi.org/10.1063/1.111266
https://doi.org/10.1063/1.111266