Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Wesley Chih-Wei Hsu"'
Autor:
Xiaorong Luo, Zhaoji Li, Wesley Chih-Wei Hsu, Zhiqiang Xiao, Florin Udrea, Tianfei Lei, Bo Zhang
Publikováno v:
IEEE Transactions on Electron Devices. 57:3033-3043
In order to achieve a high breakdown voltage (BV) and to realize self-isolation in high-voltage ICs (HVICs), a novel high-voltage n-channel lateral double-diffused MOS (LDMOS) with a buried n-island layer (BNIL) placed at the interface between a p-ty
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e37cee71b6ce2fad2ada589168c23f8e
https://doi.org/10.1109/ted.2010.2066279
https://doi.org/10.1109/ted.2010.2066279
Publikováno v:
2012 24th International Symposium on Power Semiconductor Devices and ICs.
The Tandem PiN Schottky (TPS) rectifier features lowly-doped p-layers in both active and termination regions, and is applied in 600-V rating for the first time. In the active region, the Schottky contact is in series connection with a transparent p-l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::035a8ec53aebfe84b4564370ad6a7a05
https://doi.org/10.1109/ispsd.2012.6229100
https://doi.org/10.1109/ispsd.2012.6229100
Publikováno v:
2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.
A 300-V TMBS® (Trench MOS Barrier Schottky) rectifier with novel active-cell and termination design is first proposed and demonstrated. The device features a combination of p-transparent anode and Schottky contact, considerably reducing on-state vol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29b40c8c33690c962b9d622473dfbf0e
https://doi.org/10.1109/ispsd.2011.5890795
https://doi.org/10.1109/ispsd.2011.5890795
Publikováno v:
2009 International Semiconductor Conference.
Continuous efforts have been made to improve the IGBT performance, especially in terms of the trade-off between the on-state voltages and turn-off energy losses. Recently the carrier density enhancement (CDE) technologies, which aim at increasing the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25472d7ff56a164e67232a31cc6e2868
https://doi.org/10.1109/smicnd.2009.5336697
https://doi.org/10.1109/smicnd.2009.5336697
Publikováno v:
2009 21st International Symposium on Power Semiconductor Devices & IC's.
In this paper, a new Trench Insulated Gate Bipolar Transistor (TIGBT) which features a double-gate (DG) structure is presented. The new DG-TIGBT can enhance the excess carrier density near the emitter side of the IGBTs so that the conductivity modula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5e842eeb24b4edbc8e08c3e87efec5a
https://doi.org/10.1109/ispsd.2009.5158059
https://doi.org/10.1109/ispsd.2009.5158059
Publikováno v:
IEEE Electron Device Letters. 22:551-552
In this letter, a novel trench termination structure that can inhibit the reverse leakage current substantially and reduce the process cost is introduced. For trench type power devices, such as trench MOS barrier Schottky (TMBS) diodes, this new term
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02d093ced9e2128ffe33127814b845e0
https://doi.org/10.1109/55.962660
https://doi.org/10.1109/55.962660