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Performances of AlGaN/GaN HEMTs in Planar Technology

Autor: Werquin, M., Vellas, N., Guhel, Y., Ducatteau, D., Boudart, B., Pesant, J. C., Zahia BOUGRIOUA, Marie Germain, Jean-Claude de Jaeger, Christophe Gaquière

Publikováno v: Werquin, M. ; Vellas, N. ; Guhel, Y. ; Ducatteau, D. ; Boudart, B. ; Pesant, J.C. ; Bougrioua, Z. ; Germain, M. ; De Jaeger, J.C. ; Gaquière, C. (2004) Performances of AlGaN/GaN HEMTs in Planar Technology. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
Proceedings of the 12th European Gallium Arsenide and Other Semiconductor Application Symposium, GAAS 2004
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The advantage of planar technology for the AlGaN/GaN HEMTs realization is demonstrated in this paper. A breakdown voltage closed to 100 V and an output power density of 4 W/mm at 4 GHz have been measured on a 2x25x1.5 µm² HEMT on sapphire substrate

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1b46679187a11322fa5db5a21f6948e2
http://amsacta.unibo.it/1045/

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Influence of passivation on High-Power AlGaN/GaN HEMT devices at 10GHz

Autor: Ducatteau, D., Werquin, M., Gaquière, C., Théron, D., Martin, T., Delos, E., Grimbert, B., Morvan, E., Caillas, N., Hoël, V., De Jaeger, J.C., Delage, S. L.

Publikováno v: Ducatteau, D. ; Werquin, M. ; Gaquière, C. ; Théron, D. ; Martin, T. ; Delos, E. ; Grimbert, B. ; Morvan, E. ; Caillas, N. ; Hoël, V. ; De Jaeger, J.C. ; Delage, S. L. (2004) Influence of passivation on High-Power AlGaN/GaN HEMT devices at 10GHz. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

AlGaN/GaN high electron mobility transistors (HEMTS on SiC) were characterized before and after SiO2/Si3N4 passivation. DC, small signal, pulsed and large signal measurements were performed. We discuss the role and the influence of passivation on the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5f0f92472db921d8769bfc5d9b766493
http://amsacta.unibo.it/1042/

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MILLIPRISM : millimeter wave passive radiometric imaging system

Autor: Lampin, Jean-Francois, Zaknoune, M., Wallart, X., Desplanque, L., Peytavit, Emilien, Ducournau, Guillaume, Thirault, M., Werquin, M., Jonniau, S., Thouvenin, N., Gaquière, Christophe, Vellas, N.

Publikováno v: 8ème Workshop Interdisciplinaire sur la Sécurité Globale, WISG 2014
8ème Workshop Interdisciplinaire sur la Sécurité Globale, WISG 2014, 2014, Troyes, France

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::9694a2bd3f3a8d5012c86ce662ce49c2
https://hal.archives-ouvertes.fr/hal-00939873

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High Power Performances of AlGaN/GaN HEMTs On Sapphire Substrate At F=4GHz

Autor: Vellas, N., Gaquiere, C., Guhel, Y., Werquin, M., Ducatteau, D., Boudart, B., de Jaeger, J.C.

Publikováno v: Vellas, N. ; Gaquiere, C. ; Guhel, Y. ; Werquin, M. ; Ducatteau, D. ; Boudart, B. ; de Jaeger, J.C. (2002) High Power Performances of AlGaN/GaN HEMTs On Sapphire Substrate At F=4GHz. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

The high potential at microwave frequencies of AlGaN/GaN HEMTs on sapphire substrate for power application has been demonstrated in this paper. An output power density close to 5W/mm has been measured on a 2x25x0.5µm² HEMT on sapphire substrate. Th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::de3d89c021fe6da1383d5e4c7e3cedb1

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Résonateurs MEMS en nitrure de gallium

Autor: Faucher, M., Theron, D., Cordier, Y., Semond, F., Ben Amar, A., Brandli, V., Grimbert, B., Werquin, M., Buchaillot, L.

Publikováno v: Journées Nationales du GDR Micro Nano Systèmes-Micro Nano Fluidique
Journées Nationales du GDR Micro Nano Systèmes-Micro Nano Fluidique, 2012, Bordeaux, France

National audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::9dce00cf3368db3f7c400a0bb7e57d4e
https://hal.archives-ouvertes.fr/hal-00797721

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MEMS advances and GaN based approaches

Autor: Faucher, M., Brandli, V., Grimbert, B., Ben Amar, A., Werquin, M., Gaquière, Christophe, Theron, D., Buchaillot, L.

Publikováno v: 34th Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe, WOCSDICE 2010
34th Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe, WOCSDICE 2010, May 2010, Darmstadt, Germany
34th Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe, WOCSDICE 2010, 2010, Darmstadt, Germany

International audience

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::ceb70b3eff32930bca4598e168834a97
https://hal.science/hal-00808201

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