Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Weronika Walkosz"'
Autor:
Guangxu Ju, Dongwei Xu, Carol Thompson, Matthew J. Highland, Jeffrey A. Eastman, Weronika Walkosz, Peter Zapol, G. Brian Stephenson
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-10 (2021)
The basal-plane surfaces of hexagonal close-packed crystals typically exhibit an alternating sequence of A and B steps with different atomic structures and growth kinetics. Here the authors demonstrate a method to determine whether A or B steps have
Externí odkaz:
https://doaj.org/article/8e0d27f7d3f347c393a31e70baee141b
Autor:
Matthew J. Highland, G. Brian Stephenson, Weronika Walkosz, Carol Thompson, Jeffrey A. Eastman, Dongwei Xu, Peter Zapol, Guangxu Ju
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-10 (2021)
Nature Communications
Nature Communications
The stacking sequence of hexagonal close-packed and related crystals typically results in steps on vicinal {0001} surfaces that have alternating A and B structures with different growth kinetics. However, because it is difficult to experimentally ide
Autor:
Steven J. Sibener, Rachael G. Farber, Daniel R. Killelea, Elizabeth A. Jamka, K. D. Gibson, Richard A. Rosenberg, Marie E. Turano, Maxwell Z. Gillum, Weronika Walkosz
Publikováno v:
The journal of physical chemistry letters. 12(25)
Oxygen atoms on transition metal surfaces are highly mobile under the demanding pressures and temperatures typically employed for heterogeneously catalyzed oxidation reactions. This mobility allows for rapid surface diffusion of oxygen atoms, as well
Autor:
Matthew J. Highland, Weronika Walkosz, Dongwei Xu, Peter Zapol, G. Brian Stephenson, Jeffrey A. Eastman, Carol Thompson, Guangxu Ju
Miscut surfaces of layered crystals can exhibit a stair-like sequence of terraces having periodic variation in their atomic structure. For hexagonal close-packed and related crystal structures with an {\alpha}{\beta}{\alpha}{\beta} stacking sequence,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d51036ba41d0d82a41aa875db2e7128b
http://arxiv.org/abs/2010.06166
http://arxiv.org/abs/2010.06166
Autor:
Guangxu Ju, Dongwei Xu, Carol Thompson, Matthew J. Highland, Jeffrey A. Eastman, Weronika Walkosz, Peter Zapol, G. Brian Stephenson
Burton-Cabrera-Frank (BCF) theory has proven to be a versatile framework to relate surface morphology and dynamics during crystal growth to the underlying mechanisms of adatom diffusion and attachment at steps. For an important class of crystal surfa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b2f58b674202117bd388c2e444bc21ec
Publikováno v:
Chemical Physics Letters. 739:136984
Zirconium diboride has been recently identified as a promising substrate for the growth of Group-III nitride semiconductors using reactive vapors that include ammonia as the nitrogen source. Adsorption energies and dissociation pathways of NH3 on the
Publikováno v:
The Journal of Physical Chemistry C. 118:29260-29269
X-ray photoelectron spectroscopy (XPS) and reflection absorption infrared spectroscopy (RAIRS) have been used to study the structure of molecularly adsorbed ammonia on the ZrB2(0001) surface and its subsequent dissociation. Spectra were obtained as a
Publikováno v:
Surface Science. 615:110-118
Zirconium diboride has been proposed as a viable substrate for epitaxial growth of group III nitrides. In many methods of nitride growth on ZrB2 surfaces, ammonia gas is the nitrogen source. Here we use X-ray photoelectron spectroscopy at a series of
Publikováno v:
Ultramicroscopy. 123:74-79
In silicon nitride structural ceramics, the overall mechanical and thermal properties are controlled by the atomic and electronic structures at the interface between the ceramic grains and the amorphous intergranular films (IGFs) formed by various si
Publikováno v:
Surface Science. 606:1808-1814
We have studied the dissociation of H2 on the ZrB2(0001) surface using density functional theory and reflection absorption infrared spectroscopy (RAIRS). Our results show that H2 readily dissociates on the Zr-terminated (0001) surface up to a H cover