Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Werner Schustereder"'
Autor:
Kristijan Luka Mletschnig, Mathias Rommel, Gregor Pobegen, Werner Schustereder, Peter Pichler
Publikováno v:
Materials Science Forum. 1062:38-43
The excellent material properties of the wide band gap semiconductor SiC are accompanied by challenges in device processing. Of particular importance is the incomplete activation of implanted Al acceptors after high-temperature annealing. In this wor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64cdd4ee7920f1118b60f55e53276b7f
https://doi.org/10.4028/p-sg9dq0
https://doi.org/10.4028/p-sg9dq0
Autor:
M. De Biasio, Roland Rupp, Romain Esteve, S. Doering, C. A. Fisher, M. Roesner, Werner Schustereder, Martin Kraft
Publikováno v:
Materials Science Forum. 897:411-414
In this paper, an investigation into the crystal structure of Al-and N-implanted 4H-SiC is presented, encompassing a range of physical and electrical analysis techniques, with the aim of better understanding the material properties after high-dose im
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f4c9f9d753a8f3fdc6c5a5e66785478
https://doi.org/10.4028/www.scientific.net/msf.897.411
https://doi.org/10.4028/www.scientific.net/msf.897.411
Autor:
Werner Schustereder
Publikováno v:
ECS Transactions. 77:31-42
In power device technologies distinct challenges have to be addressed. These are partly in contrast to needs and developments in advanced DRAM and Logic products that dominantly strive for ultrafast switching speed provided by lowest nm node technolo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e7e3ba74fec2244dd69c75f2113d3a6b
https://doi.org/10.1149/07705.0031ecst
https://doi.org/10.1149/07705.0031ecst
Autor:
Constantin Csato, Michael Rüb, Johannes von Borany, Ronny Kern, Roland Rupp, Tobias Höechbauer, Florian Krippendorf, Shavkat Akhmadaliev, Werner Schustereder
Publikováno v:
Materials Science Forum. 858:531-534
A new method for homogenous drift layer doping is introduced. Instead of in-situ doping during epitaxial growth a subsequent high energy ion implant step is used to dope the drift layer of 650V MPS (Merged-PN-Schottky) diodes. In order to avoid multi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::484b6a87c7d0541fa72c508d67899334
https://doi.org/10.4028/www.scientific.net/msf.858.531
https://doi.org/10.4028/www.scientific.net/msf.858.531
Autor:
Mathias Rommel, H.-J. Schulze, S. Kirnstoetter, Johannes Georg Laven, Moriz Jelinek, Lothar Frey, Werner Schustereder
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 365:240-243
In this study we examine proton implanted and subsequently annealed commercially available CZ wafers with the DLTS method. Depth-resolved spreading resistance measurements are shown, indicating an additional peak in the induced doping profile, not se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6304db3b743c7e56581e38925c7cd79
https://doi.org/10.1016/j.nimb.2015.07.078
https://doi.org/10.1016/j.nimb.2015.07.078
Autor:
Laurent Roux, Philippe Godignon, Moriz Jelinek, Marcin Zielinski, Yohann Spiegel, Frank Torregrosa, Gael Borvon, Werner Schustereder, Thomas Wuebben, Guillaume Sempere, Frederic Morancho
Publikováno v:
22nd International Conference on Ion Implantation Technology (IIT)
22nd International Conference on Ion Implantation Technology (IIT), Sep 2018, Würzburg, Germany. 5p., ⟨10.1109/IIT.2018.8807978⟩
22nd International Conference on Ion Implantation Technology (IIT), Sep 2018, Würzburg, Germany. 5p., ⟨10.1109/IIT.2018.8807978⟩
International audience; Thanks to its high throughput and low cost of ownership Plasma Immersion Ion Implantation (or Plasma Doping) has been widely used for Memory device fabrication. Its ability to implant very high doses in shallow layers, makes i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5d0e051c511493dd9e5079716cf2e415
https://hal.laas.fr/hal-01955688/document
https://hal.laas.fr/hal-01955688/document
Publikováno v:
University of Helsinki
The modeling of channeled Al implantation into SiC in a Monte Carlo binary collision (BC) framework is revisited, using experimental data from 60 keV to 1.5 MeV in a dose range from 1.8 × 1012 to 4.1 × 1014 Al/cm2. From simulated channeling maps, [
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::69ddbbc9af525aba3500dc9d3b586259
http://hdl.handle.net/10138/308763
http://hdl.handle.net/10138/308763
Autor:
Reinhart Job, Moriz Jelinek, Lothar Frey, H.-J. Schulze, Werner Schustereder, Naveen Ganagona, Mathias Rommel, Johannes Georg Laven
Publikováno v:
Solid State Phenomena. 242:169-174
Two metastable defects with energy levels at Ec-0.28eV and Ec-0.37eV, which previously have been reported in proton implanted- and in proton implanted and annealed crystalline silicon are discussed. Recent results on the peculiar behavior of these de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cf8785bf8765fbd3c5270ca0217cf522
https://doi.org/10.4028/www.scientific.net/ssp.242.169
https://doi.org/10.4028/www.scientific.net/ssp.242.169
Autor:
Mathias Rommel, Moriz Jelinek, Lothar Frey, Werner Schustereder, H.-J. Schulze, Naveen Ganagona, Johannes Georg Laven
Publikováno v:
Solid State Phenomena. 242:175-183
– For a conventional proton implantation doping process applied to crystalline silicon comprising proton implantation and subsequent furnace annealing the effect of the substrate temperature set during implantation is examined for temperatures betw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1262f2aad3a16cf7e331cd2a7d8fc88
https://doi.org/10.4028/www.scientific.net/ssp.242.175
https://doi.org/10.4028/www.scientific.net/ssp.242.175
Autor:
S. Gamerith, J. Moser, Georg Auzinger, J. Hacker, U. Bartl, Thomas Neidhart, E. Kucher, Marko Dragicevic, H.-J. Schulze, Friedrich Dr. Kröner, W. Treberspurg, A. König, T. Wübben, Thomas Bergauer, Werner Schustereder
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 765:1-6
Most modern particle physics experiments use silicon based sensors for their tracking systems. These sensors are able to detect particles generated in high energy collisions with high spatial resolution and therefore allow the precise reconstruction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5aabf46c85640436dbab27846ed606d4
https://doi.org/10.1016/j.nima.2014.04.043
https://doi.org/10.1016/j.nima.2014.04.043