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pro vyhledávání: '"Werner Saule"'
Publikováno v:
SPIE Proceedings.
Today, haze and crystal growth on the reticle surface are still a primary concern of the microlithography industry. The crystals limit the reticle usage as they result in printable defects on the wafers. Numerous studies have been presented so far. T
Autor:
Lothar Berger, Werner Saule, Hung-Chang Hsieh, Thomas Gairing, Peter Dress, Hsin-Chang Lee, Chia-Jen Chen
Publikováno v:
SPIE Proceedings.
Progress towards 65 nm next-generation lithography requires unprecedented global CD uniformity, with the actual ITRS 2002 roadmap proposing 4.2 nm 3/spl sigma/ (dense lines) for 65 nm binary masks. Since resolution requirements are satisfied only by
Autor:
Werner Saule, Anatol Schwersenz, Christian Buergel, Marlene Strobl, Peter Dress, Martin Tschinkl
Publikováno v:
SPIE Proceedings.
With shrinking feature sizes there is a growing demand for improved uniformity values and defect levels especially for aqueous develop during photomask processing. Standard nozzle systems with discrete dispense channels for applying the developer med
Publikováno v:
SPIE Proceedings.
A new type of bake system for photomasks, APB5000, has been developed, using a dynamic and multiple zone approach, to enable more precise Post Exposure Bake (PEB) and Post Coat Bake (PCB) of conventional and chemically amplified resists (CAR). The pr