Zobrazeno 1 - 10
of 133
pro vyhledávání: '"Werner Dietsche"'
Autor:
Werner Wegscheider, Liliana Arrachea, Mariano A. Real, Juan Herrera Mateos, Werner Dietsche, Alejandra Tonina, Christian Reichl
Publikováno v:
Physical Review B. 103
We analyze the thermoelectric cooling properties of a Corbino device in the quantum Hall regime on the basis of experimental data of electrical conductance. We focus on the cooling power and the coefficient of performance within and beyond linear res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::675f103de546435d0f2836499e2b4c96
https://doi.org/10.1103/physrevb.103.125404
https://doi.org/10.1103/physrevb.103.125404
Publikováno v:
Semiconductor Science and Technology, 36 (8)
Two dimensional electron gases (2DEGs) realized at GaAs/AlGaAs single interfaces by molecular-beam epitaxy (MBE) reach mobilities of about 15 million cm2 V s−1 if the AlGaAs alloy is grown after the GaAs. Surprisingly, the mobilities may drop to a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::918d1509c7fd839c73a468d0c35d02b6
Autor:
Werner Dietsche, Mariano A. Real, Werner Wegscheider, Alejandra Tonina, Liliana Arrachea, Daniel Gresta, Christian Reichl, Paula Giudici, Jürgen Weis
Publikováno v:
CONICET Digital (CONICET)
Consejo Nacional de Investigaciones Científicas y Técnicas
instacron:CONICET
Consejo Nacional de Investigaciones Científicas y Técnicas
instacron:CONICET
We measure the thermoelectric response of Corbino structures in the quantum Hall effect regime and compare it with a theoretical analysis. The measured thermoelectric voltages are qualitatively and quantitatively simulated based upon the independent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b2ab795a6b0e84d1c3cf247126801189
https://doi.org/10.1103/physrevapplied.14.034019
https://doi.org/10.1103/physrevapplied.14.034019
Publikováno v:
Physical review letters. 124(24)
The bulk properties of the bilayer quantum Hall state at total filling factor one have been intensively studied in experiment. Correlation induced phenomena such as Josephson-like tunneling and zero Hall resistance have been reported. In contrast, th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6793e7b9ade7e48abcc11a6d42b5259e
https://pubmed.ncbi.nlm.nih.gov/32639816
https://pubmed.ncbi.nlm.nih.gov/32639816
Autor:
Jan Scharnetzky, Philipp Baumann, Werner Wegscheider, Werner Dietsche, Helmut Karl, Christian Reichl
Publikováno v:
Semiconductor Science and Technology. 36:085012
Three different elements, Silicon, Selenium, and Tellurium, are ion-implanted in Gallium arsenide to form a conducting layer that serves as a back-gate to a molecular beam epitaxy (MBE) overgrown two-dimensional electron gas (2DEG). While the heavy i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eb87bdd89c691c7a9a9d0e2bb5005e20
https://doi.org/10.1088/1361-6641/ac0d9a
https://doi.org/10.1088/1361-6641/ac0d9a
Autor:
Werner Wegscheider, S. I. Gubarev, Werner Dietsche, V. M. Muravev, Yu. A. Nefyodov, D. D. Frolov, I. V. Kukushkin, A. R. Khisameeva, A. V. Shchepetilnikov, C. Reichl
The terahertz photoconductivity of 100 μ m and 20 μ m Hall bars fabricated from narrow AlAs quantum wells (QWs) of different widths is investigated in this paper. The photoresponse is dominated by collective magnetoplasmon excitations within the bo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f41683fbafe008f19fa755e3b757b19b
http://arxiv.org/abs/1904.10238
http://arxiv.org/abs/1904.10238
Autor:
Jana M. Meyer, Werner Wegscheider, Jan Scharnetzky, Werner Dietsche, C. Reichl, L. Tiemann, Matthias Berl
Publikováno v:
Semiconductor Science and Technology. 35:085019
The precise control of a bilayer system consisting of two adjacent two-dimensional electron gases (2DEG) is demonstrated by using a novel planar back-gate approach based on ion implantation. This technique overcomes some common problems of the tradit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b2e0adcf540572c2096cf6e5704a1831
https://doi.org/10.1088/1361-6641/ab9324
https://doi.org/10.1088/1361-6641/ab9324
Autor:
D. Gresta, J. Sicpc, Paula Giudici, L. Arrachea, Mariano A. Real, Werner Dietsche, Alejandra Tonina
Publikováno v:
2018 Conference on Precision Electromagnetic Measurements (CPEM 2018).
This project explores the advantages of Corbino structures to measure thermoelectric transport in the Quantum Hall regime and its metrological applications. Corbino devices were produced from GaAs/AlGaAs heterostructures, whose mobilities ranged from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c3b9e3031128bb5d2a9e190a3d38fff
https://doi.org/10.1109/cpem.2018.8501069
https://doi.org/10.1109/cpem.2018.8501069
Autor:
Werner Dietsche, Werner Wegscheider, Thomas Ihn, Christian A. Lehner, Thomas Tschirky, Janine Keller, Stefan Fält
We present molecular beam epitaxial grown single- and double-side $\delta$-doped InAlSb/InSb quantum wells with varying distances down to 50 nm to the surface on GaSb metamorphic buffers. We analyze the surface morphology as well as the impact of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cd6810a8a0da308bd2268db2f311f8dc
http://arxiv.org/abs/1805.05041
http://arxiv.org/abs/1805.05041
Autor:
Carolin Gold, Marc P. Röösli, Matthias Berl, Werner Wegscheider, Szymon Hennel, Thomas Ihn, Beat A. Braem, Klaus Ensslin, Werner Dietsche
Publikováno v:
New Journal of Physics, 20
The pattern of branched electron flow revealed by scanning gate microscopy shows the distribution of ballistic electron trajectories. The details of the pattern are determined by the correlated potential of remote dopants with an amplitude far below
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ba6c82fcb6cea51685098eb061fececa