Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Werner Bergbauer"'
Autor:
Muhammad Ali, Georg Rossbach, Jelena Ristic, Bernhard Stojetz, Volker Krause, Lars Naehle, Matthias Peter, Markus Baumann, Georg Brüderl, Alfred Lell, Soenke Tautz, Uwe Strauss, Werner Bergbauer, John Brückner, Teresa Wurm, Anne Balck, Harald König, Urs Heine, Christoph Eichler, Sven Gerhard, André Somers, Jan Wagner
Publikováno v:
Novel In-Plane Semiconductor Lasers XVIII.
More and more applications are using GaN laser diodes. Visible blue laser devices are well established light sources for converter based business projection of several thousand Lumens. Additional laser-based concepts like near-to-eye projection push
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f5348c7dd3200f0b54be625b26ad14e
https://doi.org/10.1117/12.2511976
https://doi.org/10.1117/12.2511976
Publikováno v:
ECS Journal of Solid State Science and Technology. 5:R3146-R3159
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::906c678996ba1b195bd76028cfc637d1
https://doi.org/10.1149/2.0191601jss
https://doi.org/10.1149/2.0191601jss
Autor:
Andreas Waag, Sönke Fündling, Hergo-Heinrich Wehmann, Xue Wang, Shunfeng Li, Martin Strassburg, Werner Bergbauer, Milena Erenburg, Jiandong Wei, Martin Mandl, Matin Sadat Mohajerani
Publikováno v:
Journal of Crystal Growth. 364:149-154
Selective area growth of GaN rods by metalorganic vapor phase epitaxy has attracted great interest due to its novel applications in optoelectronic and photonics. In this work, we will present the dependence of GaN rod morphology on various growth par
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a436f0ced4f0bf05a1fffc89f46caac
https://doi.org/10.1016/j.jcrysgro.2012.11.027
https://doi.org/10.1016/j.jcrysgro.2012.11.027
Autor:
Henning Riechert, Philipp Drechsel, Martin Albrecht, Peter Stauss, Toni Markurt, Werner Bergbauer, Patrick Rode, S. Fritze, Alois Krost, Ulrich Dr. Steegmüller, Tobias Schulz
Publikováno v:
physica status solidi (a). 209:427-430
In this work we focus on the impact of different buffer and nucleation layers on the corresponding crystalline quality of gallium nitride (GaN), grown by metal-organic chemical vapour deposition (MOCVD). In situ curvature measurements, X-ray diffract
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4dc45b8bd7e1ed9d19ac0f0e98783a32
https://doi.org/10.1002/pssa.201100477
https://doi.org/10.1002/pssa.201100477
Autor:
N. Linder, Achim Trampert, Jonas Lähnemann, Martin Strassburg, Werner Bergbauer, Hergo-Heinrich Wehmann, Andreas Waag, Sönke Fündling, Ch. Kölper, Shunfeng Li, Claudia Roder
Publikováno v:
Journal of Crystal Growth
We demonstrate the morphological properties of height, diameter and shape controlled N-face GaN nanorods (NRs) by adjusting conventional growth parameters of a standard metalorganic vapour phase epitaxy (MOVPE) growth process. Particularly the hydrog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::282a7d2f1677ca0265ae097f3359756f
https://doi.org/10.1016/j.jcrysgro.2010.07.067
https://doi.org/10.1016/j.jcrysgro.2010.07.067
Autor:
Xue Wang, Stephan Merzsch, Hergo-Heinrich Wehmann, Jiandong Wei, Martin Strassburg, Andreas Waag, M. Al-Suleiman, S. Fuendling, Werner Bergbauer, Shunfeng Li
Publikováno v:
Crystal Growth & Design
The influence of polarity during the MOVPE growth of GaN based sub-micrometer (sub-μm) rods has mostly been neglected up to now. In this paper we demonstrate that the surface polarity plays a crucial role for the morphology of the GaN sub-μm rods.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::03fbebca97c942be99e70a4f3a09abed
Autor:
Werner Bergbauer, Henning Riechert, Stephan Merzsch, Jiandong Wei, Johannes Ledig, Richard Neumann, Andreas Waag, Uwe Jahn, Sönke Fündling, Martin Dr. Straßburg, Mohamed Al Suleiman, Shunfeng Li, Hergo H. Wehmann, Milena Erenburg, Xue Wang, Achim Trampert
Publikováno v:
physica status solidi (c)
Vertically aligned GaN nanorods have recently obtained substantial interest as a new approach to solid state lighting. In comparison to conventional planar LEDs, 3D NanoLEDs are expected to offer substantial advantageous: very low defect density, qua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3cfe80bbaccf5efa331c7de067738239
Publikováno v:
Physik in unserer Zeit
Leuchtdioden (LEDs) glanzen durch lange Lebensdauer, gute Farbwiedergabe, schnelle Einschaltzeit und Dimmbarkeit. Das macht sie zunehmend attraktiv fur die Allgemeinbeleuchtung. Vor allem benotigen sie weniger Energie als konventionelle Leuchtmittel.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8a3ec301a879f127210012deb4e96cb2
Autor:
Berthold Hahn, Johannes Baur, Matthias Sabathil, Werner Bergbauer, Ansgar Laubsch, Matthias Peter, Tobias Meyer
Publikováno v:
physica status solidi (a). 206:1125-1129
Green InGaN LEDs showed great improvements over the last decade, but still perform not as good as blue InGaN LEDs. Brightness, Efficiency and sub-linearity of brightness versus driving current ("droop") are significantly lower for a 530 nm green LED
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::646913e0145e53cbe187982efed735fb
https://doi.org/10.1002/pssa.200880926
https://doi.org/10.1002/pssa.200880926
Publikováno v:
Microelectronics Reliability. 46:1736-1740
Light Emitting Diodes (LEDs) are commercially important devices in opto-semiconductor industry. The light emitting properties of LEDs degrade with time of operation and may lead to device failure. Even though the stability and reliability of LEDs are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc3ca15b2be8c6a8ee210fb8ff58e7c7
https://doi.org/10.1016/j.microrel.2006.07.064
https://doi.org/10.1016/j.microrel.2006.07.064