Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Weon Wi Jang"'
Autor:
Yong-Ha Song, Min-Wu Kim, Seung-Deok Ko, Weon-Wi Jang, Hyun-Ho Yang, Min-Ho Seo, Yong-Hoon Yoon, Jeong Oen Lee, Jun-Bo Yoon
Publikováno v:
2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS).
Since a microelectromechanical (MEM) switch with an electrostatically actuated cantilever was first demonstrated by Petersen in 1978 [1], MEM switches have actively been researched by many research groups. However, comparing with the conventional met
Autor:
Sung-min Kim, Sung-young Lee, Donggun Park, In-Hyuk Choi, Ji-Myoung Lee, Jun-Bo Yoon, Weon Wi Jang, Dong-Won Kim, Min-Sang Kim, Keun Hwi Cho, Eun-Jung Yoon
Publikováno v:
Solid-State Electronics. 52:1578-1583
We developed two types of titanium nitride (TiN) based nanoelectromechanical systems (NEMS) switches with the smallest dimensions ever made by typical “top-down” complementary metal–oxide–semiconductor (CMOS) fabrication technology. NEMS cant
Publikováno v:
IEEE Transactions on Electron Devices. 55:2785-2789
We proposed and demonstrated a mechanically operated random access memory (MORAM) based on an electrostatically actuated metallic microswitch for nonvolatile memory applications. The metallic microswitch-based MORAM successfully showed program and er
Publikováno v:
2008 IEEE 21st International Conference on Micro Electro Mechanical Systems.
We newly propose an active-matrix organic light-emitting diode (AMOLED) pixel circuit composed of MEMS switches and its digital driving method for grayscale modulation using time ratio gray scale (TRGS) scheme. Developing a spice compatible model of
Autor:
null Min-Sang Kim, null Weon Wi Jang, null Ji-Myoung Lee, null Sung-Min Kim, null Eun-Jung Yun, null Keun-Hwi Cho, null Sung-Young Lee, null In-Hyuk Choi, null Yong, null Jun-Bo Yoon, null Dong-Won Kim, null Donggun Park
Publikováno v:
2007 International Semiconductor Device Research Symposium.
As design rule is scaled down in complementary metal-oxide-semiconductor (CMOS) device, the several disadvantages based on electric field effect in CMOS device were emerged such as short channel effect, junction leakage and gate oxide leakage current
Publikováno v:
2007 IEEE Asian Solid-State Circuits Conference.
Microelectromechanical (MEM) switch and MEM switch-based inverter was proposed and fabricated using a CMOS-compatible poly-Si surface micromachining process. The key concept is developed that the MEM switch-based inverter with the same implementation
Publikováno v:
TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference.
A DRAM-like mechanical non-volatile memory (NVM) is newly proposed and fabricated using CMOS-compatible poly-Si surface micromachining. The key concept is developed that the proposed memory is non-volatile because the MEMS switch can clearly eliminat
Publikováno v:
SID Symposium Digest of Technical Papers. 39:13
As the current thin film transistors (TFTs) for driving AMOLED have been made of amorphous silicon, poly-Silicon, or organic materials, they have suffered from carrier mobility-related problems. We proposed in this work a new idea of using MEMS switc
Publikováno v:
IEEE Transactions on Electron Devices. Oct2008, Vol. 55 Issue 10, p2785-2789. 5p.
Publikováno v:
2007 IEEE Asian Solid-State Circuits Conference; 2007, p256-259, 4p