Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Weon Guk Jeong"'
Publikováno v:
Journal of the Korean Physical Society. 55:1041-1045
sizes, with the QD layers being separated by spacer layers with thicknesses of 20 nm and 100 nm. In the DLTS measurement for the QD samples, two signals obtained from discrete energy levels of the QDs were analyzed. For the 100-nm-spacer layered QD s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa0cf04f8effda6362d079a3d859913f
https://doi.org/10.3938/jkps.55.1041
https://doi.org/10.3938/jkps.55.1041
Autor:
S. H. Pyun, Weon Guk Jeong
Publikováno v:
Journal of the Korean Physical Society. 54:725-728
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef916e67dd9c99252f82636e9c674460
https://doi.org/10.3938/jkps.54.725
https://doi.org/10.3938/jkps.54.725
Autor:
D. G. Ko, Weon Guk Jeong
Publikováno v:
Journal of the Korean Physical Society. 52:84-87
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1411d795db3a0dbe824b89d698f1bb4c
https://doi.org/10.3938/jkps.52.84
https://doi.org/10.3938/jkps.52.84
Publikováno v:
Journal of Applied Physics; 11/15/1997, Vol. 82 Issue 10, p4865, 5p, 1 Chart, 5 Graphs
Autor:
Donghan Lee, M. S. Hwang, Weon Guk Jeong, S. H. Pyun, I. C. Lee, S. H. Lee, N. J. Kim, J. H. Lee, Hee-Dae Kim, D. K. Oh, J. W. Jang
Publikováno v:
Journal of Applied Physics. 96:5766-5770
The InGaAs quantum dots (QDs) were grown with InGaAsP(λg=1.0–1.1μm) barrier, and the emission wavelength was controlled by the composition of InGaAs QD material in the range between 1.35 and 1.65μm. It is observed that the lateral size increases
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc04b103dbbf93ecdc37e5675f4297e5
https://doi.org/10.1063/1.1803941
https://doi.org/10.1063/1.1803941
Autor:
Donghan Lee, Eui Hyun Hwang, Byung Taek Lee, Uk Hyun Lee, Jeong Soon Yim, P.D. Dapkus, Do Young Rhee, Jae Sik Sim, Weon Guk Jeong
Publikováno v:
Japanese Journal of Applied Physics. 41:524-527
InAs/InGaAsP quantum dots (QD) grown on InP substrates show strong photoluminescence (PL) signals, with peaks from 1.4 to 1.6 µm at room temperature. Time-resolved PL measurements reveal that carrier lifetimes are the same across the entire PL band
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8166de421c73c940668f618300f96f8f
https://doi.org/10.1143/jjap.41.524
https://doi.org/10.1143/jjap.41.524
Publikováno v:
Journal of Applied Physics. 82:4865-4869
Strain relaxation behavior in In0.2Ga0.8As/GaAs multiple quantum well (MQW) structures with various barrier thicknesses but with fixed well thickness was characterized by analyzing the x-ray rocking curves and low temperature photoluminescence. For t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b9547c103958cd20eac49697c0d41a2
https://doi.org/10.1063/1.366348
https://doi.org/10.1063/1.366348
Autor:
Seoung-Hwan Park, Hee-Dae Kim, Sang-Wan Ryu, Byung‐Doo Choe, Hak-Hwan Kim, In Kim, Weon Guk Jeong
Publikováno v:
Journal of Crystal Growth. 179:26-31
InGaAs/InP superlattices were grown to analyze the As carryover at the InP-on-InGaAs interface in metalorganic vapor-phase epitaxy. The analysis through the double crystal X-ray diffractometry and the subsequent simulation revealed that a InAsP trans
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9490c0d135505a48b279e1806a5d4bb
https://doi.org/10.1016/s0022-0248(97)00096-1
https://doi.org/10.1016/s0022-0248(97)00096-1
Publikováno v:
Journal of Lightwave Technology. 15:711-716
The performance of quantum-well laser diodes with tensile strained wells was theoretically calculated. Using 4/spl times/4 Luttinger-Kohn Hamiltonian, valence band dispersion was calculated and used for the calculation of material gain. Linewidth enh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe2357cf4ae028ad45a12f83d9c0cbcf
https://doi.org/10.1109/50.566694
https://doi.org/10.1109/50.566694
Publikováno v:
Journal of Applied Physics. 79:9278-9282
Carbon‐doped GaAs epilayers with concentrations as high as 1.8×1020 cm−3 were studied by photoluminescence (PL) spectroscopy. A shoulder is observed at 1.495 eV in 17 K PL spectrum of the heavily C‐doped sample grown on semi‐insulating subst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ac416973bfc7066d8b3b4c11bf6cc0b
https://doi.org/10.1063/1.362603
https://doi.org/10.1063/1.362603