Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Wenxi Fei"'
Autor:
Masayuki Iwataki, Yuhao Chang, Wenxi Fei, Aoi Morishita, Naoya Niikura, Yu Fu, Te Bi, Hiroshi Kawarada
Publikováno v:
Carbon. 175:525-533
A C–Si bonded SiO2/diamond interface is formed under a SiO2 mask during the selective diamond growth at a high temperature in a H2 atmosphere including methane (5%). A few monolayers with C–Si bonding at the SiO2/diamond surface are confirmed thr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4962268a4ee63b097c0618d4c4d7e666
https://doi.org/10.1016/j.carbon.2021.01.012
https://doi.org/10.1016/j.carbon.2021.01.012
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad88ad780c79dcf109c59e03dcf2d7fc
https://doi.org/10.7567/ssdm.2020.d-1-02
https://doi.org/10.7567/ssdm.2020.d-1-02
Autor:
Wenxi Fei, Albert Lee
Publikováno v:
The Journal of the Acoustical Society of America. 148:2474-2474
Suzhou Wu is one of the major Chinese varieties and represents the Wu culture. Many researchers have anecdotally noted ongoing sound change of its phonemic and tonal systems. However, the latest investigation remains Ye and Sheng's description (1996)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b29c38a8c79be33dc0949be15f7343a2
https://doi.org/10.1121/1.5146855
https://doi.org/10.1121/1.5146855
Publikováno v:
Applied Physics Letters. 117:112102
Heteroepitaxial growth is critical for large-scale synthesis of diamond (111) substrates. In this study, the local initial epitaxial growth of diamond (111) on Ru/c-sapphire was investigated. As the economic viability of ruthenium (Ru) is more than t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::857eab1b5830c9f2c30b70307c00c53a
https://doi.org/10.1063/5.0008287
https://doi.org/10.1063/5.0008287
Publikováno v:
Applied Physics Letters. 116:269901
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b2f1695e498181e4b21d8251de75998
https://doi.org/10.1063/5.0017925
https://doi.org/10.1063/5.0017925
Publikováno v:
Applied Physics Letters. 116:212103
During selective epitaxial growth of diamond through SiO2 masks, silicon terminations were formed on a diamond surface by replacing oxygen terminations under the masks. The high temperature of selective growth and its reductive atmosphere possibly al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35177c46437c5cbc2fa8ace3ebd002c8
https://doi.org/10.1063/1.5143982
https://doi.org/10.1063/1.5143982
Autor:
Masataka Hasegawa, Alon Hoffman, Evi Suaebah, Hiroshi Kawarada, Wenxi Fei, Maneesh Chandran, Jorge J. Buendia
Publikováno v:
Sensors and Materials. 31:1119
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a56e1b78b8a626b5a41d6b0b89d239c8
https://doi.org/10.18494/sam.2019.2231
https://doi.org/10.18494/sam.2019.2231
Autor:
Suaebah, Evi, Masataka Hasegawa, Buendi, Jorge J., Wenxi Fei, Chandran, Maneesh, Hoffman, Alon, Hiroshi Kawarada
Publikováno v:
Sensors & Materials; 2019, Vol. 31 Issue 4, Part 1, p1119-1134, 16p
Publikováno v:
The Education University of Hong Kong
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ee690eb5fb7e5c833a116e9615b3e12
https://repository.eduhk.hk/en/publications/ef3643ce-cf10-4f6a-a5ed-a2e831aac41d
https://repository.eduhk.hk/en/publications/ef3643ce-cf10-4f6a-a5ed-a2e831aac41d
