Zobrazeno 1 - 10
of 83
pro vyhledávání: '"Wenwu Pan"'
Autor:
Songqing Zhang, Khalil As’Ham, Han Wang, Wenwu Pan, Ibrahim Al‐Ani, Huijia Luo, Junliang Liu, Yongling Ren, Haroldo Takashi Hattori, Andrey E. Miroshnichenko, Lorenzo Faraone, Wen Lei
Publikováno v:
Small Science, Vol 4, Iss 10, Pp n/a-n/a (2024)
This study presents the polarization photodetection enhancement in Sb2Se3 nanotube (NT)‐based near‐infrared (NIR) photodetectors through simulation‐based and experimental investigations. High‐quality single‐crystal Sb2Se3 NTs are grown via
Externí odkaz:
https://doaj.org/article/a1ab8162e0a44d9cb8a3b7015d4b07ff
Publikováno v:
Molecules, Vol 29, Iss 16, p 3947 (2024)
In this paper, we present a study on the direct growth of Hg0.7Cd0.3Te thin films on layered transparent van der Waals mica (001) substrates through weak interface interaction through molecular beam epitaxy. The preferred orientation for growing Hg0.
Externí odkaz:
https://doaj.org/article/d2d9ca27a8394552b9fff85263bbeadf
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 4, Pp n/a-n/a (2023)
Abstract Van der Waals epitaxial (vdW) growth of semiconductor thin films on 2D layered substrates has recently attracted considerable attention since it provides a potential pathway for realizing monolithically integrated devices and flexible device
Externí odkaz:
https://doaj.org/article/b5ed19a899e44a26b29743ce25f04de7
Publikováno v:
Photonics, Vol 9, Iss 12, p 972 (2022)
Researchers have shown that single-photon light detection and ranging (lidar) is highly sensitive and has a high temporal resolution. Due to the excellent beam directivity of lidar, most applications focus on ranging and imaging. Here, we present a l
Externí odkaz:
https://doaj.org/article/f79881118976405c8692fddd8b930d7f
Autor:
Juanjuan Liu, Wenwu Pan, Xiaoyan Wu, Chunfang Cao, Yaoyao Li, Xiren Chen, Yanchao Zhang, Lijuan Wang, Jinyi Yan, Dongliang Zhang, Yuxin Song, Jun Shao, Shumin Wang
Publikováno v:
AIP Advances, Vol 7, Iss 11, Pp 115006-115006-8 (2017)
We present electrically injected GaAs/GaAsBi single quantum well laser diodes (LDs) emitting at a record long wavelength of 1141 nm at room temperature grown by molecular beam epitaxy. The LDs have excellent device performances with internal quantum
Externí odkaz:
https://doaj.org/article/400e8e69b4be4f46a208cb6a4766e248
Publikováno v:
AIP Advances, Vol 5, Iss 12, Pp 127104-127104-8 (2015)
InP1-xBix epilayers with bismuth (Bi) concentration x= 1.0% were grown on InP by gas source molecular beam epitaxy (GS-MBE) at low temperature (LT). Bi incorporation decreased the intrinsic free electron concentration of low temperature grown InP ind
Externí odkaz:
https://doaj.org/article/4c55032560704b5cbd984420ee4ffe0d
Publikováno v:
AIP Advances, Vol 5, Iss 8, Pp 087103-087103-7 (2015)
Bi4Te3, as one of the phases of the binary Bi–Te system, shares many similarities with Bi2Te3, which is known as a topological insulator and thermoelectric material. We report the micro-Raman spectroscopy study of 50 nm Bi4Te3 films on Si substrate
Externí odkaz:
https://doaj.org/article/45034ffed47546bc9611c0a5c2f08e6e
Publikováno v:
IEEE Transactions on Power Electronics. 38:3624-3639
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24e35c9c99b82d11e0494a724f295adf
https://doi.org/10.1109/tpel.2022.3219279
https://doi.org/10.1109/tpel.2022.3219279
Autor:
Wenwu Pan, Shuo Ma, Xiao Sun, Shimul Kanti Nath, Songqing Zhang, Renjie Gu, Zekai Zhang, Lorenzo Faraone, Wen Lei
Publikováno v:
Journal of Applied Physics. 133
The ever-present demand for high-performance HgCdTe infrared detectors with larger array size and lower cost than currently available technologies based on lattice-matched CdZnTe (211)B substrates has fuelled research into heteroepitaxial growth of H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b883610614322e030b2f586c084727a
https://doi.org/10.1063/5.0143854
https://doi.org/10.1063/5.0143854
Autor:
Wenwu Pan, Gilberto Umana-Membreno, Jarek Antoszewski, Wen Lei, Renjie Gu, Hemendra Kala, Nima Dehdashtiakhavan, Lorenzo Faraone
Publikováno v:
Electro-optical and Infrared Systems: Technology and Applications XIX.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86327ee28e27e44655732c8e2acf5af6
https://doi.org/10.1117/12.2645270
https://doi.org/10.1117/12.2645270