Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Wensuo Chen"'
Publikováno v:
AIP Advances, Vol 13, Iss 11, Pp 115017-115017-6 (2023)
A novel trench Schottky rectifier with an isolated gate (IG-TSR) is proposed and investigated by simulation. It features an isolation of a trench MOS poly-gate from an anode metal in a conventional trench MOS barrier Schottky (TMBS) rectifier. In the
Externí odkaz:
https://doaj.org/article/a82a160364a64447b471711f30b6e568
Autor:
Kunfeng Zhu, Peijian Zhang, Zicheng Xu, Tao Wang, Xiaohui Yi, Min Hong, Yonghui Yang, Guangsheng Zhang, Jian Liu, Jianan Wei, Yang Pu, Dong Huang, Ting Luo, Xian Chen, Xinyue Tang, Kaizhou Tan, Wensuo Chen
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 30-35 (2023)
Low frequency (LF) noise is a powerful and non-destructive technique for evaluating the oxide-semiconductor interface and an effective evaluating tool in characterizing electronic device’s structure and reliability. In this study, we present a syst
Externí odkaz:
https://doaj.org/article/94d4e4dddf4447698a346b49f0219f0a
Autor:
Liu Jian, Chao Chen, Qiu Sheng, Min Hong, Jianqun Yang, Zicheng Xu, Tao Wang, Xingji Li, Peijian Zhang, Zhihua Feng, Jian Li, Jiao Liu, Wensuo Chen, Xianchao Wen, Yan Wang, Zhang Zhengyuan, Zhu Kunfeng, Guangsheng Zhang, Ruijin Liao, Chen Xian
Publikováno v:
IEEE Transactions on Electron Devices. 68:4208-4213
A comparative combined stress-induced reliability issues between Auger hot carrier and ionizing radiation in double polysilicon bipolar transistor is investigated. The observed differences in the low-frequency noise spectra of devices with different
Autor:
Yonghui Yang, Zhu Kunfeng, Jinle Gui, Wensuo Chen, Peijian Zhang, Kaizhou Tan, Xueliang Xu, Feiyu Jiang
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 20:548-554
Temperature dependent high forward current stress induced drift of electrical parameters (current gain ( ${\beta }$ ) variations, emitter resistance ( R $_{E}$ ) decrease) in polysilicon emitter bipolar transistors has been revealed. It shows that th
Publikováno v:
IEICE Electronics Express. 19:20220288-20220288
Autor:
Xue Wu, Wensuo Chen, Yi Zhong, Peijian Zhang, Jian'an Wang, Yonghui Yang, Kaizhou Tan, Han Weimin, Xianchao Wen, Zhou Yu, Zhu Kunfeng, Jing Li
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 19:494-500
Anomalous irradiation response to total ionizing dose effects of 60Co ${\gamma }$ ray in double polysilicon self-aligned (DPSA) bipolar PNP transistors at a low dose rate was observed. It is experimentally revealed that the anomalous current gain ( $
Publikováno v:
Journal of Computational Electronics. 17:707-712
A novel Schottky contact super barrier rectifier (SSBR) with a top N-enhancement layer and a P-injector (P-TNEL-SSBR) is proposed and investigated by simulation. In addition to the concept of SSBR we presented recently, the proposed P-TNEL-SSBR has a
Publikováno v:
IEEE Transactions on Electron Devices. 65:215-222
In this paper, a trench Schottky contact super barrier rectifier (SSBR) with a p-injector (P-T-SSBR) is proposed and investigated by simulation. In addition to the concept of SSBR, the proposed P-T-SSBR also includes a trench gate design and a p-inje
Publikováno v:
Soil Dynamics and Earthquake Engineering. 145:106740
For a train moving along a curved path, centrifugal forces are induced in addition to gravitational loads. In this paper, the 2.5D approach for loads moving along a straight path is extended to treating both the vertical and horizontal loads moving a
Publikováno v:
Renewable and Sustainable Energy Reviews. 78:624-639
High efficiency, high power density, and high reliability are always the technical trends of converters for renewable energy applications. Silicon carbide (SiC) devices can break through the technical limitations of silicon (Si) devices. Thus, SiC de