Zobrazeno 1 - 1
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pro vyhledávání: '"Wensong Peng"'
Publikováno v:
Micromachines, Vol 15, Iss 1, p 92 (2023)
A 6500 V SiC trench MOSFET with integrated unipolar diode (UD-MOS) is proposed to improve reverse conduction characteristics, suppress bipolar degradation, and reduce switching loss. An N type base region under the trench dummy gate provides a low ba
Externí odkaz:
https://doaj.org/article/780a23b845db402ab7b274130ab773c0
