Zobrazeno 1 - 10
of 50
pro vyhledávání: '"Wensheng Shen"'
Publikováno v:
Frontiers in Pediatrics, Vol 12 (2024)
BackgroundNeonatal hyperbilirubinemia (NHB) is one of the most common diseases in the neonatal period. Without timely diagnosis and treatment, it can lead to long-term complications. In severe cases, it may even result in fatality. The UGT1A1 gene an
Externí odkaz:
https://doaj.org/article/84e1d598ea7746479fa09e71ee657125
Publikováno v:
Microorganisms, Vol 11, Iss 10, p 2397 (2023)
The biodegradation of tar-rich coal in the Ordos Basin was carried out by Bacillus licheniformis (B. licheniformis) under actions of four kinds of surfactants, namely, a biological surfactant (Rh), a nonionic surfactant (Triton X-100), an anionic sur
Externí odkaz:
https://doaj.org/article/3d4e70fa807148258c2ba2c5cd19242c
Autor:
Runze Han, Peng Huang, Yachen Xiang, Hong Hu, Sheng Lin, Peiyan Dong, Wensheng Shen, Yanzhi Wang, Xiaoyan Liu, Jinfeng Kang
Publikováno v:
Advanced Intelligent Systems, Vol 4, Iss 12, Pp n/a-n/a (2022)
To improve the computing speed and energy efficiency of deep neural network (DNN) applications, in‐memory computing with nonvolatile memory (NVM) is proposed to address the time‐consuming and energy‐hungry data shuttling issue. Herein, a digita
Externí odkaz:
https://doaj.org/article/e35a6ad5ae39431f8dba71a30b075da8
Autor:
Yulin Feng, Peng Huang, Yizhou Zhang, Wensheng Shen, Weijie Xu, Yachen Xiang, Xiangxiang Ding, Yudi Zhao, Bin Gao, Huaqiang Wu, He Qian, Lifeng Liu, Xiaoyan Liu, Jinfeng Kang
Publikováno v:
Advanced Electronic Materials, Vol 6, Iss 4, Pp n/a-n/a (2020)
Abstract By introducing a capacitor in series (CST), a self‐terminated (ST) operation scheme is proposed to achieve high‐parallel forming of resistive random access memory (RRAM) array with reduced time and energy consumption. Once the RRAM cell
Externí odkaz:
https://doaj.org/article/5ac44678f26348a68d86df336285d41c
Autor:
Zheng Zhou, Chen Liu, Wensheng Shen, Zhen Dong, Zhe Chen, Peng Huang, Lifeng Liu, Xiaoyan Liu, Jinfeng Kang
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-5 (2017)
Abstract A binary spike-time-dependent plasticity (STDP) protocol based on one resistive-switching random access memory (RRAM) device was proposed and experimentally demonstrated in the fabricated RRAM array. Based on the STDP protocol, a novel unsup
Externí odkaz:
https://doaj.org/article/32ab87f008474a3d9a4322d6a4a91ef0
Autor:
Peng Huang, Xing Zhang, Wensheng Shen, Yulin Feng, Yudi Zhao, Xiaoyan Liu, Lifeng Liu, Jinfeng Kang, Mengqi Fan
Publikováno v:
IEEE Transactions on Electron Devices. 68:103-108
A seamless, reconfigurable, and highly parallel in-memory stochastic computing (SC) approach is proposed and experimentally demonstrated in resistive random access memory (RRAM) array. By utilizing the probabilistic switching behavior of RRAM and par
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e360dde87d9c43abb10cbdd4716d3fa8
https://doi.org/10.1109/ted.2020.3037279
https://doi.org/10.1109/ted.2020.3037279
Autor:
Lifeng Liu, Peng Huang, Bin Gao, Wensheng Shen, Huaqiang Wu, Jinfeng Kang, He Qian, Runze Han, Mengqi Fan, Xiaoyan Liu, Zheng Zhou, Yizhou Zhang
Publikováno v:
IEEE Transactions on Electron Devices. 67:469-473
Binarized neural network (BNN) enables resistive switching random access memory (RRAM) with high nonlinearity and nonsymmetry to realize online training, using an RRAM & comparator structure. In this work, a new hardware implementation approach is pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a90f700d5127dd8ff83c8161e6c7108
https://doi.org/10.1109/ted.2019.2956967
https://doi.org/10.1109/ted.2019.2956967
Autor:
Runze Han, Jinfeng Kang, Huaqiang Wu, Xing Zhang, Zheng Zhou, Peng Huang, Wensheng Shen, Lifeng Liu, Mengqi Fan, He Qian, Bin Gao, Xiaoyan Liu
Publikováno v:
IEEE Electron Device Letters. 40:1538-1541
Nonvolatile and cascadable stateful logic operations are experimentally demonstrated within a 1 k-bit one-transistor-one-resistor (1T1R) resistive random access memory (RRAM) array, where NAND gates serve as the building blocks. A robust dual-gate-vo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::058ce63f2b4cbcf72502473c9296a808
https://doi.org/10.1109/led.2019.2931947
https://doi.org/10.1109/led.2019.2931947
Autor:
Yulin Feng, Peng Huang, Zheng Zhou, Lifeng Liu, Li Ruiyi, Jinfeng Kang, Xiangyu Wang, Xiaoyan Liu, Wensheng Shen, Xiangxiang Ding
Publikováno v:
2020 IEEE Silicon Nanoelectronics Workshop (SNW).
The spike-timing-dependent-plasticity (STDP) is considered to be the basic function for the synapse device to simulate biological activities of the brain. In this paper, we demonstrate four standard STDP forms with nanosecond timescale based on the a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f0150d892eb36c41c3d870a8ff4a598
https://doi.org/10.1109/snw50361.2020.9131664
https://doi.org/10.1109/snw50361.2020.9131664
Autor:
Huaqiang Wu, Wensheng Shen, Peng Huang, Bin Gao, Weijie Xu, Xing Zhang, He Qian, Lifeng Liu, Xiangyu Wang, Yulin Feng, Xiaoyan Liu, Jinfeng Kang
Publikováno v:
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
For the first time, a novel capacitor-based (cap-based) stateful logic operation scheme for in-memory computing is proposed and experimentally demonstrated in a 1k-bit 1T1R RRAM array. By utilizing the interconnect capacitor of the array, the cap-bas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08d9872e14f2a7f06989ef150ca837d0
https://doi.org/10.1109/edtm47692.2020.9117832
https://doi.org/10.1109/edtm47692.2020.9117832