Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Wenrong Zhuang"'
Autor:
Linfei Gao, Ze Zhong, Qiyan Zhang, Xiaohua Li, Xinbo Xiong, Shaojun Chen, Longkou Chen, Huaibao Yan, Anle Zhang, Jiajun Han, Wenrong Zhuang, Feng Qiu, Hsien-Chin Chiu, Shuangwu Huang, Xinke Liu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 165-169 (2024)
In this work, we investigated the stability of a ${p}$ -GaN gate with high electron mobility transistors (HEMTs) including an internal integrated gate circuit. A circuit was designed to improve ${p}$ -GaN gate stability by using capacitance to releas
Externí odkaz:
https://doaj.org/article/c8b7c641924545828805336a5265d962
Autor:
Xinke Liu, Haofan Wang, Junye Wu, Ping Zou, Yudi Tu, Shaojun Chen, Xinbo Xiong, Xinzhong Wang, Jiajun Han, Wenrong Zhuang, Zhichao Yang, Feng Qiu, Hsien-Chin Chiu, Ze Zhong
Publikováno v:
IEEE Transactions on Electron Devices. 70:1601-1606
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::069ffb97b961a3770c60feca5a6af99f
https://doi.org/10.1109/ted.2023.3241565
https://doi.org/10.1109/ted.2023.3241565
Autor:
Qiang Liu, Marcin Zając, Małgorzata Iwińska, Shuai Wang, Wenrong Zhuang, Michał Boćkowski, Xinqiang Wang
Publikováno v:
Applied Physics Letters. 121:172103
Semi-insulating freestanding GaN crystals are excellent candidates for substrates of GaN-based power electronic devices. Carbon doping is believed to be currently the optimal way to achieve semi-insulating GaN crystals grown by halide vapor phase epi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb07550b9e8926bcba6385f8a1445553
https://doi.org/10.1063/5.0118250
https://doi.org/10.1063/5.0118250