Zobrazeno 1 - 10
of 99
pro vyhledávání: '"Wenquan Ma"'
Publikováno v:
E3S Web of Conferences, Vol 136, p 04008 (2019)
The GPS-based mobile terminals provide available hardware for online learning. Some learning software can be applied on the GPS-based mobile terminals to help people learn at any place and any time. The data in the software is properly managed and in
Externí odkaz:
https://doaj.org/article/9dbe2ba2c6a84938843163b68dbbc0b4
Autor:
Bing Wang, Xiaobin Jia, Luan Shu, Yunru Peng, Changmei Wang, Ping Li, Yingjie Wei, Wenquan Ma
Publikováno v:
Molecules, Vol 17, Iss 7, Pp 8617-8632 (2012)
The study aimed to investigate the potential of zebrafish in imitating mammal phase I metabolism of natural compounds. Three diterpenoid quinones from Radix Salvia miltiorrhiza, namely tanshinone IIA (TIIA), cryptotanshinone (Cry) and tanshinone I (T
Externí odkaz:
https://doaj.org/article/e70b0a1165364eefaf3950102c635c29
Publikováno v:
IEEE Transactions on Electron Devices. 69:4392-4395
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61e68b6309207d5bd5b7bf6daceb79ff
https://doi.org/10.1109/ted.2022.3186648
https://doi.org/10.1109/ted.2022.3186648
Publikováno v:
IEEE Electron Device Letters. 42:1634-1637
We report on a mid wavelength avalanche photodiode (APD) device with a separate absorption and multiplication structure. Type II InAs/GaSb superlattices are used as the absorber and lattice-matched high bandgap AlAsSb material is used as the multipli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31ed0ba3a11a03744102d7d97c7dd238
https://doi.org/10.1109/led.2021.3116129
https://doi.org/10.1109/led.2021.3116129
Publikováno v:
Journal of Semiconductors. 44:042301
We report on a long wavelength interband cascade photodetector with type II InAs/GaSb superlattice absorber. The device is a three-stage interband cascade structure. At 77 K, the 50% cutoff wavelength of the detector is 8.48 μm and the peak photores
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96377d1c8da013f969cc10903684769d
https://doi.org/10.1088/1674-4926/44/4/042301
https://doi.org/10.1088/1674-4926/44/4/042301
Autor:
Xu-chang Zhou, Jianliang Huang, Haipeng Wang, Jincheng Kong, Junbin Li, Yingchun Mu, Yanhua Zhang, Wenquan Ma, Hai Ren, Dongsheng Li, Zhi Jiang, Hao Sun, Canbing zhao
Publikováno v:
Infrared Physics & Technology. 128:104539
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b4c4ac1b9a245135024ae871dba0be7
https://doi.org/10.1016/j.infrared.2022.104539
https://doi.org/10.1016/j.infrared.2022.104539
Publikováno v:
IEEE Electron Device Letters. 41:73-75
We report on a long wavelength type-II InAs/GaSb superlattice photodetector using resonant tunneling diode (RTD) structure. The linewidth of the satellite peak of the x-ray diffraction curve of the as-grown sample is only 15.7 arcsec showing a very h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7af6439aaed1a3ade6fffebc1f581173
https://doi.org/10.1109/led.2019.2953896
https://doi.org/10.1109/led.2019.2953896
Autor:
Wenjun Huang, Yulian Cao, Jianliang Huang, Biying Nie, Yanhua Zhang, Wenquan Ma, Chengcheng Zhao
Publikováno v:
IEEE Photonics Technology Letters. 31:137-140
We report on a short/mid-wave (SW/MW) two-band type-II InAs/GaSb superlattice infrared heterojunction phototransistor (HPT). The structure consists of two back-to-back HPTs for the SW and MW detections. At 77 K, the 50% cutoff wavelength of the SW an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bd69615c93a616e072099906911221f
https://doi.org/10.1109/lpt.2018.2884734
https://doi.org/10.1109/lpt.2018.2884734
Autor:
Chengcheng Zhao, Biying Nie, Xiao Meng, Yanhua Zhang, Wenquan Ma, Jianliang Huang, Diana L. Huffaker, Shiyu Xie, Dominic Kwan
We report on a high-performance mid-wavelength infrared avalanche photodetector (APD) with separate absorption and multiplication regions. InAs is used as the absorber material and high-bandgap AlAs 0.13 Sb 0.87 is used as the multiplication material
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::77f1bdd22a6edcb31f52ee82f28d8a71
https://orca.cardiff.ac.uk/id/eprint/132122/1/InAs-APD.pdf
https://orca.cardiff.ac.uk/id/eprint/132122/1/InAs-APD.pdf
Autor:
Biying Nie, Yanhua Zhang, Yulian Cao, Xiaolu Guo, Jianliang Huang, Chengcheng Zhao, Wenjun Huang, Wenquan Ma
Publikováno v:
Journal of Nanoscience and Nanotechnology. 18:7532-7535
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::691790692ca9269688205fff1cca69d2
https://doi.org/10.1166/jnn.2018.16051
https://doi.org/10.1166/jnn.2018.16051