Zobrazeno 1 - 10
of 82
pro vyhledávání: '"Wenjuan Xiong"'
Publikováno v:
IEEE Transactions on Neural Systems and Rehabilitation Engineering, Vol 31, Pp 2831-2838 (2023)
Patients with psychogenic non-epileptic seizures (PNES) may exhibit similar clinical features to patients with epileptic seizures (ES). Misdiagnosis of PNES and ES can lead to inappropriate treatment and significant morbidity. This study investigates
Externí odkaz:
https://doaj.org/article/06833fbbdd3147abbf547b1cc7e0541d
Autor:
Wenjuan Xiong, Rachel E. Stirling, Daniel E. Payne, Ewan S. Nurse, Tatiana Kameneva, Mark J. Cook, Pedro F. Viana, Mark P. Richardson, Benjamin H. Brinkmann, Dean R. Freestone, Philippa J. Karoly
Publikováno v:
EBioMedicine, Vol 93, Iss , Pp 104656- (2023)
Summary: Background: Seizure risk forecasting could reduce injuries and even deaths in people with epilepsy. There is great interest in using non-invasive wearable devices to generate forecasts of seizure risk. Forecasts based on cycles of epileptic
Externí odkaz:
https://doaj.org/article/a3d01aaec69b4490ad1e5c102da764d8
Autor:
Meiting Liang, Jingkun Liu, Wujin Chen, Yi He, Mayina Kahaer, Rui Li, Tingting Tian, Yezhou Liu, Bing Bai, Yuena Cui, Shanshan Yang, Wenjuan Xiong, Yan Ma, Bei Zhang, Yuping Sun
Publikováno v:
Frontiers in Endocrinology, Vol 13 (2022)
BackgroundWe aimed to assess the differences in the gut microbiome among participants with different uric acid levels (hyperuricemia [HUA] patients, low serum uric acid [LSU] patients, and controls with normal levels) and to develop a model to predic
Externí odkaz:
https://doaj.org/article/64df94b295ae4fdfb6f326309ec23b4e
Autor:
Zhuo Chen, Huilong Zhu, Guilei Wang, Qi Wang, Zhongrui Xiao, Yongkui Zhang, Jinbiao Liu, Shunshun Lu, Yong Du, Jiahan Yu, Wenjuan Xiong, Zhenzhen Kong, Anyan Du, Zijin Yan, Yantong Zheng
Publikováno v:
Nanomaterials, Vol 13, Iss 12, p 1867 (2023)
At sub-3 nm nodes, the scaling of lateral devices represented by a fin field-effect transistor (FinFET) and gate-all-around field effect transistors (GAAFET) faces increasing technical challenges. At the same time, the development of vertical devices
Externí odkaz:
https://doaj.org/article/94b5062252864711b56688868cb09bee
Autor:
Zhuo Chen, Huilong Zhu, Guilei Wang, Qi Wang, Zhongrui Xiao, Yongkui Zhang, Jinbiao Liu, Shunshun Lu, Yong Du, Jiahan Yu, Wenjuan Xiong, Zhenzhen Kong, Anyan Du, Zijin Yan, Yantong Zheng
Publikováno v:
Nanomaterials, Vol 13, Iss 11, p 1786 (2023)
Transistor scaling has become increasingly difficult in the dynamic random access memory (DRAM). However, vertical devices will be good candidates for 4F2 DRAM cell transistors (F = pitch/2). Most vertical devices are facing some technical challenges
Externí odkaz:
https://doaj.org/article/c4259ceaf8894f1db0a706cb9a310538
Autor:
Wenjuan Xiong, Shanshan Cui, Jia Dong, Yuanyuan Su, Yu Han, Zhiyi Qu, Shihao Jin, Zhi Li, Lei Gao, Tingkai Cui, Xin Zhang
Publikováno v:
Nutrients, Vol 15, Iss 9, p 2106 (2023)
Gestational weight gain (GWG) may be affected by the timing of dietary intake. Previous studies have reported contradictory findings, possibly due to inconsistent characterizations of meal timing. We conducted a birth cohort study in Tianjin to deter
Externí odkaz:
https://doaj.org/article/a8a0e96aae88481d8ee9d64145760dc2
Autor:
Tingkai Cui, Jingchao Zhang, Liyuan Liu, Wenjuan Xiong, Yuanyuan Su, Yu Han, Lei Gao, Zhiyi Qu, Xin Zhang
Publikováno v:
Nutrients, Vol 15, Iss 1, p 194 (2022)
The impact of dietary inflammatory potential on serum cytokine concentrations in second and third trimesters of Chinese pregnant women is not clear. A total of 175 pregnant women from the Tianjin Maternal and Child Health Education and Service Cohort
Externí odkaz:
https://doaj.org/article/f724a27d84564f1696483554a7d675e5
Autor:
Buqing Xu, Yong Du, Guilei Wang, Wenjuan Xiong, Zhenzhen Kong, Xuewei Zhao, Yuanhao Miao, Yijie Wang, Hongxiao Lin, Jiale Su, Ben Li, Yuanyuan Wu, Henry H. Radamson
Publikováno v:
Materials, Vol 15, Iss 10, p 3594 (2022)
In this manuscript, a novel dual-step selective epitaxy growth (SEG) of Ge was proposed to significantly decrease the defect density and to create fully strained relaxed Ge on a Si substrate. With the single-step SEG of Ge, the threading defect densi
Externí odkaz:
https://doaj.org/article/80d90ff530c541cd8ef55c4ea41b50b6
Autor:
Xuewei Zhao, Guilei Wang, Hongxiao Lin, Yong Du, Xue Luo, Zhenzhen Kong, Jiale Su, Junjie Li, Wenjuan Xiong, Yuanhao Miao, Haiou Li, Guoping Guo, Henry H. Radamson
Publikováno v:
Nanomaterials, Vol 11, Iss 5, p 1125 (2021)
In this article, we demonstrated novel methods to improve the performance of p-i-n photodetectors (PDs) on a germanium-on-insulator (GOI). For GOI photodetectors with a mesa diameter of 10 μm, the dark current at −1 V is 2.5 nA, which is 2.6-fold
Externí odkaz:
https://doaj.org/article/bfd8626b67e044cb93359140d723a737
Autor:
Mehdi Akbari-Saatlu, Marcin Procek, Claes Mattsson, Göran Thungström, Hans-Erik Nilsson, Wenjuan Xiong, Buqing Xu, You Li, Henry H. Radamson
Publikováno v:
Nanomaterials, Vol 10, Iss 11, p 2215 (2020)
The unique electronic properties of semiconductor nanowires, in particular silicon nanowires (SiNWs), are attractive for the label-free, real-time, and sensitive detection of various gases. Therefore, over the past two decades, extensive efforts have
Externí odkaz:
https://doaj.org/article/aa3beb1dd35249c3bca79a3c78d8667e