Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Wenhsing Wu"'
Publikováno v:
Applied Surface Science. 257:2303-2307
Circular via holes with diameters of 10, 25, 50 and 70 μm and rectangular via holes with dimensions of 10 μm × 100 μm, 20 μm × 100 μm and 30 μm × 100 μm and drilled depths between 105 and 110 μm were formed in 300 μm thick bulk 4H-SiC sub
Autor:
Fan Ren, Edwin L. Piner, Aik Goh, B. S. Kang, Andrew Sciullo, Byung Hwan Chu, Stephen J. Pearton, Jerry W. Johnson, Jenshan Lin, Brent P. Gila, Chih-Yang Chang, K. J. Linthicum, Wenhsing Wu
Publikováno v:
IEEE Sensors Journal. 10:64-70
Peltier element cooling of ungated AlGaN/GaN high electron mobility transistors (HEMTs) is shown to be an effective method for condensing exhaled breath, enabling the measurement of the pH and glucose of the exhaled breath condensate (EBC). By compar
Autor:
David P. Norton, Stephen J. Pearton, Chih-Yang Chang, Jenshan Lin, Byung Hwan Chu, Fan Ren, Wenhsing Wu, K. H. Chen
Publikováno v:
Applied Surface Science. 256:183-186
We have demonstrated UV excimer laser drilled a submicron via hole with an entrance diameter of 300 nm inside a via hole with an entrance diameter of 5 μm. The smaller via hole formation was due to the refocusing of the reflected UV light from the t
Autor:
K. J. Linthicum, Fan Ren, Edwin L. Piner, Jerry W. Johnson, C.Y. Chang, Jenshan Lin, Byung Hwan Chu, Wenhsing Wu, B. S. Kang, Aik Goh, Brent P. Gila, Andrew Sciullo, Stephen J. Pearton
Publikováno v:
ECS Transactions. 19:85-97
Peltier element cooling is demonstrated to be an effective method for collecting exhaled breath condensate (EBC) on AlGaN/GaN High Electron Mobility Transistors (HEMT). The HEMT sensors have functionalized gate areas for glucose and pH measurement. T
Publikováno v:
IEEE Microwave Magazine. 10:47-56
Medical technology has improved remarkably over the past few generations, becoming more sophisticated and less invasive as the years progress. Now, with microwave Doppler radar phase modulation, noncontact respiration and heartbeat monitoring offers
Autor:
Fan Ren, Soohwan Jang, Jenshan Lin, Tienyu Chang, Stephen J. Pearton, J. K. Gillespie, Robert C. Fitch, Wenhsing Wu
Publikováno v:
Microwave and Optical Technology Letters. 49:1152-1154
In this article, resistive mixers using AlGaN/GaN high electron-mobility transistor (HEMT) devices are examined. Models of the GaN devices in linear region were created. Behavior of conversion loss with LO power is well predicted using the developed
Autor:
Wenhsing Wu, Sangwon Ko, Fan Ren, Soohwan Jang, Jenshan Lin, Robert C. Fitch, James K. Gillespie, Stephen J. Pearton
Publikováno v:
Microwave and Optical Technology Letters. 48:1955-1957
This paper reports the development of a high efficiency and compact power amplifier using an AlGaN/GaN high electron mobility transistor (HEMT). The class-F load network in microstrip topology was applied to a 0.75-μm gate length and 300-μm gate wi
Autor:
B. S. Kang, Byung Hwan Chu, Brent P. Gila, Aik Goh, Fan Ren, Jerry W. Johnson, Wenhsing Wu, Hung-Ta Wang, Stephen J. Pearton, J. N. Lin, Yiider Tseng, Andrew Sciullo, Chih-Yang Chang, Edwin L. Piner, Lele T, K. J. Linthicum
Publikováno v:
SPIE Proceedings.
Chemical sensors can be used to analyze a wide variety of environmental and biological gases and liquids and may need to be able to selectively detect a target analyte. Different methods, including gas chromatography (GC), chemiluminescence, selected
Autor:
Steve Pearton, Robert C. Fitch, Soohwan Jang, Fan Ren, Jenshan Lin, Wenhsing Wu, James K. Gillespie, Jae Shin Kim, A. Verma
Publikováno v:
2006 Asia-Pacific Microwave Conference.
This paper presents a new design method to implement the high efficiency oscillator based on the AlGaN/GaN HEMT for the wireless power transmission (WPT) system. The oscillator has been developed with Sc2O3-passivated AlGaN/GaN HEMT and has achieved
Publikováno v:
ECS Meeting Abstracts. :2089-2089
not Available.