Zobrazeno 1 - 10
of 173
pro vyhledávání: '"Wenhong Sun"'
Publikováno v:
Heliyon, Vol 10, Iss 8, Pp e29540- (2024)
Background: Starting from 2009, H1N1 has been one of the respiratory diseases that afflict the global population. Concurrently, due to the influence of COVID-19, it has become widely accepted that preventing the virus's spread necessitates personal p
Externí odkaz:
https://doaj.org/article/285ad0a1e88d4262a31a101884f6adda
Publikováno v:
Sensors, Vol 24, Iss 11, p 3418 (2024)
Ultraviolet (UV) radiation has been widely utilized as a disinfection strategy to effectively eliminate various pathogens. The disinfection task achieves complete coverage of object surfaces by planning the motion trajectory of autonomous mobile robo
Externí odkaz:
https://doaj.org/article/2d557e1bd3e645dd99e7648dea17fca6
Publikováno v:
Molecules, Vol 29, Iss 5, p 1152 (2024)
AlGaN-based LEDs are promising for many applications in deep ultraviolet fields, especially for water-purification projects, air sterilization, fluorescence sensing, etc. However, in order to realize these potentials, it is critical to understand the
Externí odkaz:
https://doaj.org/article/59f6005fb2c04441aac3615b50f79b18
Autor:
Mudassar Maraj, Hafeez Anwar, Amreen Saba, Ghulam Nabi, Nusrat Shaheen, Nawal Ansar, Wajid Ali, Aleena Fatima, Ahmad Raza, Wenhong Sun
Publikováno v:
Arabian Journal of Chemistry, Vol 16, Iss 8, Pp 104906- (2023)
In this study, nanostructured cadmium oxide and silver phosphate (CdO/Ag3PO4) nanocomposites are synthesized and studied for their electrochemical properties as well as photocatalytic potential of these composites is also investigated. The specific c
Externí odkaz:
https://doaj.org/article/4176ad0e3f454bdb90c6fd3cdbee9117
Publikováno v:
Materials, Vol 17, Iss 2, p 327 (2024)
AlN epilayers were grown on magnetron-sputtered (MS) (11–22) AlN buffers on m-plane sapphire substrates at 1450 °C via hydride vapour phase epitaxy (HVPE). The MS buffers were annealed at high temperatures of 1400–1600 °C. All the samples were
Externí odkaz:
https://doaj.org/article/6e509ad6045f4bc5b4c170332821efbb
Autor:
Yanlian Yang, Yao Liu, Lianshan Wang, Shuping Zhang, Haixia Lu, Yi Peng, Wenwang Wei, Jia Yang, Zhe Chuan Feng, Lingyu Wan, Benjamin Klein, Ian T. Ferguson, Wenhong Sun
Publikováno v:
Materials, Vol 16, Iss 23, p 7442 (2023)
The high-quality aluminum nitride (AlN) epilayer is the key factor that directly affects the performance of semiconductor deep-ultraviolet (DUV) photoelectronic devices. In this work, to investigate the influence of thickness on the quality of the Al
Externí odkaz:
https://doaj.org/article/aa256e7fc1164ea4aa8a3e6ef18cb66c
Publikováno v:
Nanomaterials, Vol 13, Iss 9, p 1546 (2023)
The applications of three-dimensional materials combined with two-dimensional materials are attractive for constructing high-performance electronic and photoelectronic devices because of their remarkable electronic and optical properties. However, tr
Externí odkaz:
https://doaj.org/article/686f0bd0bce14520a83fbd19bce38ff9
Autor:
Shuping Zhang, Hong Yang, Lianshan Wang, Hongjuan Cheng, Haixia Lu, Yanlian Yang, Lingyu Wan, Gu Xu, Zhe Chuan Feng, Benjamin Klein, Ian T. Ferguson, Wenhong Sun
Publikováno v:
Materials, Vol 16, Iss 5, p 1925 (2023)
Bulk aluminum nitride (AlN) crystals with different polarities were grown by physical vapor transport (PVT). The structural, surface, and optical properties of m-plane and c-plane AlN crystals were comparatively studied by using high-resolution X-ray
Externí odkaz:
https://doaj.org/article/408aad5be8e044d9bb08a4980547cf93
Autor:
Wenwang Wei, Yi Peng, Yanlian Yang, Kai Xiao, Mudassar Maraj, Jia Yang, Yukun Wang, Wenhong Sun
Publikováno v:
Nanomaterials, Vol 12, Iss 22, p 3937 (2022)
The high crystal quality and low dislocation densities of aluminum nitride (AlN) grown on flat and nano-patterned sapphire substrate that are synthesized by the metal-organic chemical vapor deposition (MOCVD) method are essential for the realization
Externí odkaz:
https://doaj.org/article/9a1e86f62fcb4cae9ff0b558731df718
Publikováno v:
Nanomaterials, Vol 12, Iss 21, p 3731 (2022)
The current pandemic crisis caused by SARS-CoV-2 has also pushed researchers to work on LEDs, especially in the range of 220–240 nm, for the purpose of disinfecting the environment, but the efficiency of such deep UV-LEDs is highly demanding for ma
Externí odkaz:
https://doaj.org/article/59fff1f89dd64a19992990de64560f48