Zobrazeno 1 - 10
of 149
pro vyhledávání: '"Wengang Bi"'
Autor:
Le Chang, Yen-Wei Yeh, Sheng Hang, Kangkai Tian, Jianquan Kou, Wengang Bi, Yonghui Zhang, Zi-Hui Zhang, Zhaojun Liu, Hao-Chung Kuo
Publikováno v:
Nanoscale Research Letters, Vol 15, Iss 1, Pp 1-9 (2020)
Abstract Owing to high surface-to-volume ratio, InGaN-based micro-light-emitting diodes (μLEDs) strongly suffer from surface recombination that is induced by sidewall defects. Moreover, as the chip size decreases, the current spreading will be corre
Externí odkaz:
https://doaj.org/article/93eb8fbadef7437298971b8b8fcbcf15
Publikováno v:
Nanoscale Research Letters, Vol 15, Iss 1, Pp 1-11 (2020)
Abstract Quantum dots (QDs) as emerging light-converting materials show the advantage of enhancing color quality of white light-emitting diode (WLED). However, WLEDs employing narrow-emitting monochromic QDs usually present unsatisfactory color rende
Externí odkaz:
https://doaj.org/article/4b02c4fda59a403885c9fc88a040eff1
Autor:
Hanxin Liu, Chun Sun, Zhiyuan Gao, Chong Geng, Shuangshuang Shi, Le Wang, Sijing Su, Wengang Bi
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-9 (2019)
Abstract Perovskite quantum dots (QDs) have been widely used in white light-emitting diodes (WLEDs), due to their high quantum yield (QY), tunable bandgap, and simple preparation. However, the red-emitting perovskite QDs are usually containing iodine
Externí odkaz:
https://doaj.org/article/d22fe16181ff49a3a8cabca0dc48421f
Autor:
Yuxin Zheng, Yonghui Zhang, Ji Zhang, Ce Sun, Chunshuang Chu, Kangkai Tian, Zi-Hui Zhang, Wengang Bi
Publikováno v:
Nanoscale Research Letters, Vol 14, Iss 1, Pp 1-9 (2019)
Abstract In this work, flip-chip AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) with various meshed contact structures are systematically investigated via three-dimensional finite-difference time-domain (3D FDTD) method. It is observed
Externí odkaz:
https://doaj.org/article/9b470f616b774d698251751784779a5a
Autor:
Yonghui Zhang, Ji Zhang, Yuxin Zheng, Ce Sun, Kangkai Tian, Chunshang Chu, Zi-Hui Zhang, Jay Guoxu Liu, Wengang Bi
Publikováno v:
IEEE Photonics Journal, Vol 11, Iss 1, Pp 1-9 (2019)
In this paper, we investigate the effect of omni-directional reflectors (ODRs) on the light extraction efficiency (LEE) for flip-chip near-ultraviolet light-emitting diodes (LEDs) on patterned (PSS) and flat sapphire substrate (FSS) using three-dimen
Externí odkaz:
https://doaj.org/article/591560e6be9d4dab9b2b29ad6fa31f14
Autor:
Danyang Zhang, Chunshuang Chu, Kangkai Tian, Jianquan Kou, Wengang Bi, Yonghui Zhang, Zi-Hui Zhang
Publikováno v:
AIP Advances, Vol 10, Iss 6, Pp 065032-065032-8 (2020)
In this work, we simply take advantage of the polarization effect to efficiently improve the hole injection from the p-type electron blocking layer (p-EBL) to the end of the active region for AlGaN based deep ultraviolet light emitting diodes (DUV LE
Externí odkaz:
https://doaj.org/article/ce38c733b46d497fa62d8bd4f6c54331
Autor:
Jiamang Che, Chunshuang Chu, Kangkai Tian, Jianquan Kou, Hua Shao, Yonghui Zhang, Wengang Bi, Zi-Hui Zhang
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-14 (2018)
Abstract In this report, AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) with different p-AlGaN/n-AlGaN/p-AlGaN (PNP-AlGaN) structured current spreading layers have been described and investigated. According to our results, the adopted
Externí odkaz:
https://doaj.org/article/126052d963d7490284f05755c9bef8b8
Autor:
Zi-Hui Zhang, Sung-Wen Huang Chen, Chunshuang Chu, Kangkai Tian, Mengqian Fang, Yonghui Zhang, Wengang Bi, Hao-Chung Kuo
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-7 (2018)
Abstract This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a specifically designed superlattice p-type electron blocking layer
Externí odkaz:
https://doaj.org/article/6772fe7d158c415db987ead5fb11ef58
Autor:
Yonghui Zhang, Yuxin Zheng, Ruilin Meng, Ce Sun, Kangkai Tian, Chong Geng, Zi-Hui Zhang, Guoxu Liu, Wengang Bi
Publikováno v:
IEEE Photonics Journal, Vol 10, Iss 4, Pp 1-9 (2018)
In this work, we investigate the effect of sidewall angle, height and space of an air cavity extractor (AC-Extractor) on the polarization-dependent light extraction efficiency (LEE) for AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) us
Externí odkaz:
https://doaj.org/article/add3e5ef1af84fe3870a41f631d4b530
Publikováno v:
IEEE Photonics Journal, Vol 9, Iss 5, Pp 1-9 (2017)
An inclined sidewall scattering structure with air cavity characterized by a metal bottom and flat parallel top (Bottom_metal) is proposed to enhance the light extraction efficiency (LEE) for AlGaN-based deep ultraviolet light-emitting diodes (DUV LE
Externí odkaz:
https://doaj.org/article/879180deb01445b4912380a73c2ed7bf