Zobrazeno 1 - 10
of 11 439
pro vyhledávání: '"Wendt J. A."'
Autor:
Curry, M. J., Rudolph, M., England, T. D., Mounce, A. M., Jock, R. M., Bureau-Oxton, C., Harvey-Collard, P., Sharma, P. A., Anderson, J. M., Campbell, D. M., Wendt, J. R., Ward, D. R., Carr, S. M., Lilly, M. P., Carroll, M. S.
High-fidelity single-shot readout of spin qubits requires distinguishing states much faster than the T1 time of the spin state. One approach to improving readout fidelity and bandwidth (BW) is cryogenic amplification, where the signal from the qubit
Externí odkaz:
http://arxiv.org/abs/1901.04570
Publikováno v:
Mathematics & Financial Economics; Aug2024, Vol. 18 Issue 2/3, p313-331, 19p
Autor:
Pacheco, J. L., Singh, M., Perry, D. L., Wendt, J. R., Eyck, G. Ten, Manginell, R. P., Pluym, T., Luhman, D. R., Lilly, M. P., Carroll, M. S., Bielejec, E.
We demonstrate a capability of deterministic doping at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a targeted locat
Externí odkaz:
http://arxiv.org/abs/1711.00792
Autor:
Rochette, S., Rudolph, M., Roy, A. -M., Curry, M., Eyck, G. Ten, Manginell, R., Wendt, J., Pluym, T., Carr, S. M., Ward, D., Lilly, M. P., Carroll, M. S., Pioro-Ladrière, M.
Publikováno v:
Appl. Phys. Lett. 114, 083101 (2019)
We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and the other a
Externí odkaz:
http://arxiv.org/abs/1707.03895
Autor:
Rudolph, M., Harvey-Collard, P., Jock, R., Jacobson, N. T., Wendt, J., Pluym, T., Dominguez, J., Ten-Eyck, G., Manginell, R., Lilly, M. P., Carroll, M. S.
Publikováno v:
in 2016 IEEE International Electron Devices Meeting (IEDM) (2016) pp. 34.1.1-34.1.4
Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic quantum dot (QD) with an implanted donor. We show for
Externí odkaz:
http://arxiv.org/abs/1705.05887
Autor:
Shirkhorshidian, A., Gamble, John King, Maurer, L., Carr, S. M., Dominguez, J., Eyck, G. A. Ten, Wendt, J. R., Nielsen, E., Jacobson, N. T., Lilly, M. P., Carroll, M. S.
Publikováno v:
Phys. Rev. Applied 10, 044003 (2018)
Despite their ubiquity in nanoscale electronic devices, the physics of tunnel barriers has not been developed to the extent necessary for the engineering of devices in the few-electron regime. This problem is of urgent interest, as this is the precis
Externí odkaz:
http://arxiv.org/abs/1705.01183
Autor:
Lu, T. M., Gamble, J. K., Muller, R. P., Nielsen, E., Bethke, D., Eyck, G. A. Ten, Pluym, T., Wendt, J. R., Dominguez, J., Lilly, M. P., Carroll, M. S., Wanke, M. C.
Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for \revEdit{their} potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with
Externí odkaz:
http://arxiv.org/abs/1608.08107
Autor:
Singh, M., Pacheco, J. L., Perry, D., Garratt, E., Eyck, G. Ten, Bishop, N. C., Wendt, J. R., Manginell, R. P., Dominguez, J., Pluym, T., Luhman, D. R., Bielejec, E., Lilly, M. P., Carroll, M. S.
Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. In this work, a focused ion beam is used to implant antimony donors close to quantum dots. Ion detec
Externí odkaz:
http://arxiv.org/abs/1512.04593
Autor:
Curry, M. J., England, T. D., Bishop, N. C., Ten-Eyck, G., Wendt, J. R., Pluym, T., Lilly, M. P., Carr, S. M., Carroll, M. S.
Publikováno v:
App. Phys. Lett. 106, 203505 (2015)
We examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-amplification of a single electron transistor (SET). The SET current modulates the base current of the HBT directly. The HBT-SET circuit is immersed in liquid he
Externí odkaz:
http://arxiv.org/abs/1509.08201
Autor:
Shirkhorshidian, A., Bishop, N. C., Dominguez, J., Grubbs, R. K., Wendt, J. R., Lilly, M. P., Carroll, M. S.
We present transport measurements of silicon MOS split gate structures with and without Sb implants. We observe classical point contact (PC) behavior that is free of any pronounced unintentional resonances at liquid He temperatures. The implanted dev
Externí odkaz:
http://arxiv.org/abs/1501.03442