Zobrazeno 1 - 10
of 60
pro vyhledávání: '"Wenchang Yeh"'
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-8 (2022)
The field-effect mobility of oxide semiconductor thin-film transistors is not sufficiently high compared to silicon thin-film transistors. Magari et al. use a low-temperature solid-phase crystallization process to fabricate In2O3 thin-film transistor
Externí odkaz:
https://doaj.org/article/01b615e296324cf1a4edbe6ed5fc6b17
Publikováno v:
Nanomaterials, Vol 12, Iss 17, p 2958 (2022)
Hydrogenated polycrystalline In2O3 (In2O3:H) thin-film transistors (TFTs) fabricated via the low-temperature solid-phase crystallization (SPC) process with a field-effect mobility (μFE) exceeding 100 cm2 V−1 s−1 are promising candidates for futu
Externí odkaz:
https://doaj.org/article/e861354c261e49eaa8ac5c33865e4b77
Improvement of dielectric and ferroelectric properties by laser sintering of pulsed EPD BaTiO3 films
Publikováno v:
Ceramics International. 49:12745-12749
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a4b2a8fe329d4a8f80ad39d9082ceb0
https://doi.org/10.1016/j.ceramint.2022.12.139
https://doi.org/10.1016/j.ceramint.2022.12.139
Publikováno v:
ACS applied materials & interfaces, vol 14, iss 44
The use of a laser with a Gaussian-beam profile is frequently adopted in attempts of crystallizing nonsingle-crystal thin films; however, it merely results in the formation of polycrystal thin films. In this paper, selective area crystallization of n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::35f93f6a4af00df73d7d10b2d3b95bfe
https://escholarship.org/uc/item/4z94m2b9
https://escholarship.org/uc/item/4z94m2b9
Autor:
Wenchang Yeh
Publikováno v:
Green Photonics and Smart Photonics ISBN: 9781003338338
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98ec847674ef2e4773e39744f09e0d27
https://doi.org/10.1201/9781003338338-4
https://doi.org/10.1201/9781003338338-4
Publikováno v:
2022 29th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d3d4dabd0585c18d10b3cb97411d1e6
https://doi.org/10.23919/am-fpd54920.2022.9851313
https://doi.org/10.23919/am-fpd54920.2022.9851313
Publikováno v:
Journal of Materials Science. 55:14105-14111
Crystallization of thin film materials by exploiting laser-induced crystallization has been advancing for the past four decades. This unique thin film technique has pedominantly been used in processing thin film semiconductor materials made of a sing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24aba40c4c3a8837ff46b57bae3e8263
https://doi.org/10.1007/s10853-020-05013-7
https://doi.org/10.1007/s10853-020-05013-7
Autor:
Wenchang Yeh, Masato Ohya
Publikováno v:
Japanese Journal of Applied Physics. 62:SC1067
A fully depleted silicon-on-insulator (FD-SOI) MOSFET using a low-temperature sputtering SiO2 gate insulator (GI) was fabricated via a resistless process without a cleanroom. The resultant average characteristics with standard deviations were field-e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b6d28b67e649d180aac8972aec91c4b
https://doi.org/10.35848/1347-4065/acb2d3
https://doi.org/10.35848/1347-4065/acb2d3
Publikováno v:
Proceedings of the International Display Workshops. :120
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a7a50a3b60a4d8eafbf12cb50cfb908
https://doi.org/10.36463/idw.2022.0120
https://doi.org/10.36463/idw.2022.0120
Publikováno v:
ECS Meeting Abstracts. :1277-1277
Oxide semiconductors have been extensively studied as active channel layers of thin-film transistors (TFTs) for electronic applications. However, the field-effect mobility (μ FE) of oxide TFTs is not sufficiently high to compete with that of low-tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c898021d3aa6abbccec9ad413644cf48
https://doi.org/10.1149/ma2022-02351277mtgabs
https://doi.org/10.1149/ma2022-02351277mtgabs