Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Wen-Yueh Liu"'
Efficiency enhancement of 400 nm violet LEDs utilizing island‐like GaN thick film by HVPE technology
Autor:
Wen-Yueh Liu, Michael Heuken, Shyi-Ming Pan, Yih-Der Guo, Jenq-Dar Tsay, Jing-Mei Wang, Po Chun Liu, Liang-Wen Wu
Publikováno v:
physica status solidi c. 4:49-52
In this study, we develop a novel way to fabricate InGaN/GaN LED chips with special shape for improving the output power. Crack-free shaped GaN islands were first prepared on c-axis sapphire substrate by using HVPE selective area growth. By doing so,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c8ee1ab7937381596e1faa64f7c4f1e
https://doi.org/10.1002/pssc.200673566
https://doi.org/10.1002/pssc.200673566
Autor:
Wen-Yueh Liu, Michael Heuken, A. Alam, Peter Brückner, D. Schmitz, Jenq-Dar Tsay, Ferdinand Scholz, Frank Habel
Publikováno v:
physica status solidi (c). 2:2049-2052
Thick GaN layers have been grown by hydride vapor phase epitaxy (HVPE) on different GaN templates grown by metalorganic vapor phase epitaxy. Crack formation could be reduced by using a hydrogen/nitrogen carrier gas mixture. We found strongly differen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e47db9bb40c39208525dbfbcd26e49e
https://doi.org/10.1002/pssc.200461459
https://doi.org/10.1002/pssc.200461459
Publikováno v:
Journal of Electroceramics. 13:839-846
This paper studies the influence of growth temperatures in the range 825 to 1050_∘C on the surface morphologies of GaN crystals grown on a SiO2 dot-patterned substrate using Epitaxy Lateral Overgrowth (ELO) and Hydride Vapor Phase Epitaxy (HVPE) te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5ead2b3f07cc09452cac3033e535035
https://doi.org/10.1007/s10832-004-5201-0
https://doi.org/10.1007/s10832-004-5201-0
Publikováno v:
Journal of Crystal Growth. 260:79-84
This paper investigates the growth mechanism of GaN for the hydride vapor phase epitaxy (HVPE) process in the N 2 and H 2 carrier gas ambients. Differences are observed between the surface morphologies of GaN films grown in N 2 carrier gas and those
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c31087db7d1045afb5152cd689fd3461
https://doi.org/10.1016/j.jcrysgro.2003.08.033
https://doi.org/10.1016/j.jcrysgro.2003.08.033
Publikováno v:
MRS Proceedings. 764
The low temperature growth of GaN crystal using epitaxy lateral overgrowth (ELO) on SiO2 dot pattern below 900°C by hydride vapor phase epitaxy (HVPE) have been studied. It is observed that the growth rate of GaN hexagonal pyramidal crystals along [
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9633360143ee37817e5abcce80179524
https://doi.org/10.1557/proc-764-c2.1
https://doi.org/10.1557/proc-764-c2.1
Autor:
Wen-Yueh Liu, 劉文岳
88
Field Emission Displays (FED) are considered to be the most viable candidates to replace traditional CRT displays, and have the potential to compete with other display products, such as liquid crystal displays. One of the key requirements for
Field Emission Displays (FED) are considered to be the most viable candidates to replace traditional CRT displays, and have the potential to compete with other display products, such as liquid crystal displays. One of the key requirements for
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/14100191269478076693
Publikováno v:
Journal of Electroceramics; Jul2004, Vol. 13 Issue 1-3, p839-846, 8p