Zobrazeno 1 - 10
of 815
pro vyhledávání: '"Wen-Yan Yin"'
Publikováno v:
IEEE Access, Vol 12, Pp 119238-119245 (2024)
The carrier multiplication phenomenon involves hot carriers, which gain kinetic energy while accelerating to equilibrium with the established avalanching electric fields, and is typically explained via the local avalanche model. This work presents tw
Externí odkaz:
https://doaj.org/article/c6e5391eeb44490c86ad867b87ee527a
Publikováno v:
Engineering, Vol 22, Iss , Pp 125-140 (2023)
This article presents a 39 GHz transceiver front-end chipset for 5G multi-input multi-output (MIMO) applications. Each chip includes two variable-gain frequency-conversion channels and can support two simultaneous independent beams, and the chips als
Externí odkaz:
https://doaj.org/article/c580f278607a487f8cb376fc674689dc
Autor:
Oussama Gassab, Yanning Chen, Yali Shao, Jingxiao Li, Ding-E Wen, Fang He, Zhizhen Su, Peina Zhong, Jian Wang, Dongyan Zhao, Wen-Yan Yin
Publikováno v:
IEEE Access, Vol 10, Pp 100682-100699 (2022)
An efficient transmission line model of high-speed cables is established, to predict its response at a high-frequency region (up to 20 GHz). Especially, an appropriate conformal mapping technique is applied to formulate the per-unit-length parameters
Externí odkaz:
https://doaj.org/article/fba030af15a24145879cd05c6a146c67
Autor:
Da-Wei Wang, Wenchao Chen, Wen-Sheng Zhao, Guo-Dong Zhu, Kai Kang, Pingqi Gao, Jose E. Schutt-Aine, Wen-Yan Yin
Publikováno v:
IEEE Access, Vol 7, Pp 3897-3908 (2019)
Thermal crosstalk in a highly integrated RRAM array due to the self-heating effect is one of the most critical issues affecting device reliability. In this paper, two types of “thermal-house” structures are proposed to optimize the thermal manage
Externí odkaz:
https://doaj.org/article/b51b2d22edd64dc5aa1d572f87fd4e25
Autor:
Da-Wei Wang, Wenchao Chen, Wen-Sheng Zhao, Guo-Dong Zhu, Zhen-Guo Zhao, Jose E. Schutt-Aine, Wen-Yan Yin
Publikováno v:
IEEE Access, Vol 7, Pp 31273-31285 (2019)
A hybrid finite volume-finite element method which can avoid overestimation of volume shared by each vertex in the meshing grid is proposed to solve the diffusive transport governed continuity equation. The simulation results demonstrate that the imp
Externí odkaz:
https://doaj.org/article/1bb7b91f8b994334b65dda01c514688c
Publikováno v:
IEEE Access, Vol 6, Pp 3051-3058 (2018)
A differential probe-fed liquid crystal (LC)-based frequency tunable circular-ring patch antenna is presented. Besides, cavity model is extended to analyze the LC-based antenna for the differential operation. According to the cavity model, the permit
Externí odkaz:
https://doaj.org/article/513463cc5cc648769bd515342200dfb8
Publikováno v:
IEEE Access, Vol 6, Pp 53499-53508 (2018)
Due to its ultrathin feature, graphene has been recently proposed as diffusion barrier layer for Cu wires. This paper is geared toward developing an equivalent single-conductor (ESC) transmission-line (TL) model for analysis of Cu-graphene interconne
Externí odkaz:
https://doaj.org/article/ef03cf7fad3942d8b4d292d2cc0c8a52
Publikováno v:
IEEE Access, Vol 6, Pp 75278-75292 (2018)
In this paper, a compact passive equalizer for differential transmission channel is designed in TSV-based three-dimensional integrated circuits (3-D ICs). The compact size of the equalizer is achieved by a square shunt metal line. Three simplified od
Externí odkaz:
https://doaj.org/article/a3330690981a496f8f21e652bdfbe5c0
Autor:
Yiming Yu, Kai Kang, Yiming Fan, Chenxi Zhao, Huihua Liu, Yunqiu Wu, Yong-Ling Ban, Wen-Yan Yin
Publikováno v:
IEEE Access, Vol 5, Pp 9389-9397 (2017)
This paper deals with the fabrication of an inductorless wideband low-noise amplifier (LNA). The LNA includes two branches in parallel: a common-source (CS) path and a common-gate (CG) path. The CS path is responsible for providing enough power gain,
Externí odkaz:
https://doaj.org/article/c651f669c8c3484bac6d5deff8907696
Publikováno v:
AIP Advances, Vol 9, Iss 4, Pp 045310-045310-6 (2019)
An improved multifilamentary conduction model for the reset process in resistive random access memory (RRAM) is constructed by considering the stochastic distribution of oxygen vacancies (Vo). In this context, conduction filaments (CFs) have differen
Externí odkaz:
https://doaj.org/article/e79b09805db640929b7f3073e5614843