Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Wen-Wei Yeh"'
Autor:
Wen-Wei Yeh, 葉文偉
97
The purpose of this study is to apply the fuzzy approach of interpretive structural modeling (FAISM) to analyze the individualized hierarchical structures of number and quantity concepts. According to number and quantity competence indicators
The purpose of this study is to apply the fuzzy approach of interpretive structural modeling (FAISM) to analyze the individualized hierarchical structures of number and quantity concepts. According to number and quantity competence indicators
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/10939963573031320153
Autor:
Wen-Wei Yeh, Tung-Ming Pan
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 27:700-705
In this article, the authors developed a silicon-oxide-high-κ-oxide-silicon (SOHOS) memory structure using a high-κ Y2O3 nanocrystal film as the charge-trapping layer for flash memory applications. From x-ray photoelectron spectroscopic and atomic-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b889c4a0e9188ed64432ad0747f2735
https://doi.org/10.1116/1.3151816
https://doi.org/10.1116/1.3151816
Autor:
Wen-Wei Yeh, Tung-Ming Pan
Publikováno v:
IEEE Transactions on Electron Devices. 55:2354-2360
In this paper, we propose a novel high-k Y2O3 poly-Si-oxide-nitride-oxide-silicon (SONOS)-type flash memory. The structural and morphological features of Y2O3 films were studied using atomic force microscopy, transmission electron microscopy, and X-r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02803c35dfeb59191b255e3bae083290
https://doi.org/10.1109/ted.2008.927401
https://doi.org/10.1109/ted.2008.927401
Autor:
Yi-Hsuan Hsiao, Wen-Wei Yeh, Chih-Chang Hsieh, Chih-Yuan Lu, Chih-Shen Chang, Kuo-Pin Chang, Yen-Hao Shih, Hang-Ting Lue
Publikováno v:
2013 5th IEEE International Memory Workshop.
A 3D NAND test chip is fabricated to study hot-electron assisted programming. By modifying the local self-boosting method, channel potential is locally boosted, resulting in a large lateral electric field and in turn producing band-to-band tunneling
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2a30df517ac7aaa987d23483764fa4d
https://doi.org/10.1109/imw.2013.6582119
https://doi.org/10.1109/imw.2013.6582119
Autor:
Chia-Jung Chiu, Ti-Wen Chen, Chih-Shen Chang, Chih-Yuan Lu, Yen-Hao Shih, Chih-Wei Hu, Tzung Shen Chen, Hang-Ting Lue, Shih-Lin Huang, Yan-Ru Chen, Wen-Wei Yeh, Kuo-Pin Chang, S. C. Huang, Chun-Hsiung Hung, Yi-Hsuan Hsiao, Shuo-Nan Hung, Shih-Hung Chen, Chih-Chang Hsieh, Guan-Ru Lee, Chieh-Fang Chen
Publikováno v:
2012 International Electron Devices Meeting.
The design architecture for 3D vertical gate (VG) NAND Flash is discussed in detail. With the unique structure of 3D VG and its decoding method, we have developed several important design innovations to optimize this technology: (1) “Shift-BL scram
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f7d6d43a0900aab0ba069d8e1b02100
https://doi.org/10.1109/iedm.2012.6479015
https://doi.org/10.1109/iedm.2012.6479015
Publikováno v:
2007 International Semiconductor Device Research Symposium.
In this paper, high-k Y2TiO5 metal-oxide-high-k material-oxide-silicon type (MOHOS) memory fabricated through RF sputtering. The XRD, XPS, and AFM analyses indicate the formation of oxide/Y2TiO5/oxide memory after annealing at 900 degC. The electrica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d192cc7c1f5ddc52c569821274680986
https://doi.org/10.1109/isdrs.2007.4422266
https://doi.org/10.1109/isdrs.2007.4422266
Autor:
Wen-Wei Yeh, Tung-Ming Pan
Publikováno v:
Applied Physics Letters. 92:173506
In this letter, a silicon-oxide-high-k-oxide-silicon memory structure using a high-k Y2O3 film as the charge trapping layer is reported for nonvolatile memory application. From x-ray photoelectron spectroscopic analysis, we found that the Y2O3 layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffc0746f604cd9e2e9b1145adaac59c1
https://doi.org/10.1063/1.2919086
https://doi.org/10.1063/1.2919086
Autor:
Wen-Wei Yeh, Tung-Ming Pan
Publikováno v:
Electrochemical and Solid-State Letters. 11:G37
A polysilicon-oxide-nitride-oxide-silicon-type flash memory using a high-k yttrium oxide (Y 2 O 3 ) film as the trapping storage layer is developed. This high-k Y 2 O 3 charge trapping layer memory exhibited large threshold voltage shifting (memory w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5062e575f67ae2de97b11c6a3f9d6df0
https://doi.org/10.1149/1.2919136
https://doi.org/10.1149/1.2919136
Publikováno v:
Applied Physics Letters. 91:062909
In this letter, the authors propose the formation of stacked oxide/Y2TiO5/oxide layers for flash memory application. The quality of a high-k Y2TiO5 memory was examined by x-ray diffraction, x-ray photoelectron spectroscopic, atomic force microscopy,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a576158ca1a3f9adb90e85c955b285ff
https://doi.org/10.1063/1.2768630
https://doi.org/10.1063/1.2768630
Publikováno v:
Journal of Applied Physics. 101:024110
The structural properties and electrical characteristics of thin Nd2O3 gate oxides were deposited on silicon substrates by reactive rf sputtering. The structural and morphological features of these films were studied, as a function of the growth cond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c0d8294e42c5ba45e28b773ff4e2ba1
https://doi.org/10.1063/1.2426937
https://doi.org/10.1063/1.2426937