Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Wen-Wei Chou"'
Autor:
Wen-Wei Chou, 周文偉
96
TiO2-based field-effect transistors (FETs) were designed and fabricated using nano-TiO2 and metal ion-doped TiO2 thin films prepared by sol-gel methods. It fabricated the bottom gate electrode on the ITO glass and source/drain electrodes on t
TiO2-based field-effect transistors (FETs) were designed and fabricated using nano-TiO2 and metal ion-doped TiO2 thin films prepared by sol-gel methods. It fabricated the bottom gate electrode on the ITO glass and source/drain electrodes on t
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/31290604291315297224
Autor:
Wen-Wei Chou, 周文偉
83
The objective of this research is proposed for a design pro- cedure for the reinforced concrete structure with the ADAS- shear wall devices,and with the hope that the procedure can be a reference of the similar structures'' seismic deesign. T
The objective of this research is proposed for a design pro- cedure for the reinforced concrete structure with the ADAS- shear wall devices,and with the hope that the procedure can be a reference of the similar structures'' seismic deesign. T
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/13025114074787869835
Publikováno v:
2016 IEEE 5th Asia-Pacific Conference on Antennas and Propagation (APCAP).
This work describes a planar 1 × 4 dipole array with dual-band operation for LTE access points. The impedance bandwidths, determined from VSWR ≦ 2.0, can reach about 485 / 883 MHz (19.0 / 25.2 %) for the LTE 2.3 / 2.5 / 3.5 GHz operating bands, re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d06d8df89745030b3ee2d8de168594c
https://doi.org/10.1109/apcap.2016.7843252
https://doi.org/10.1109/apcap.2016.7843252
Autor:
Leo Chau-Kuang Liau, Wen-Wei Chou
Publikováno v:
Microelectronic Engineering. 86:361-366
In our present investigations, field-effect transistors (FETs) based on nano-TiO"2 and metal-ion-doped TiO"2 particles were fabricated and their characteristics were studied. Semiconductor characteristics of nano-TiO"2/metal-ion-doped TiO"2 films, wh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b32bdde9cd1f281a6f5be72ca002a6f0
https://doi.org/10.1016/j.mee.2008.11.013
https://doi.org/10.1016/j.mee.2008.11.013
Publikováno v:
Industrial & Engineering Chemistry Research. 47:2273-2278
Photolithography of a pattern-forming process was developed with ultraviolet (UV) exposure and lithography methods, using poly(vinyl butyral) (PVB) with a nano-TiO2 composite as a photoresist. The PVB/TiO2 photoresist with high mechanical strength ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c068918427816936cb8656d27180b777
https://doi.org/10.1021/ie071331o
https://doi.org/10.1021/ie071331o
Autor:
Leo Chau-Kuang Liau, Wen-Wei Chou
Publikováno v:
Semiconductor Science and Technology. 24:055007
TiO2-based field-effect transistors (FETs) were designed and fabricated using nano-TiO2 and Fe3+-doped TiO2 samples prepared by sol–gel methods. Homo-junction characteristics of nano-TiO2/Fe3+-doped TiO2 films, which perform as a semiconductor diod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d9b122e22b9193442446a4713dfd9a9
https://doi.org/10.1088/0268-1242/24/5/055007
https://doi.org/10.1088/0268-1242/24/5/055007
Publikováno v:
Industrial & Engineering Chemistry Research; Apr2008, Vol. 47 Issue 7, p2273-2278, 6p