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pro vyhledávání: '"Wen-Tsung Fang"'
Publikováno v:
Journal of Nanomaterials, Vol 2014 (2014)
A 20 nm SiOxlayer is deposited using radio-frequency sputtering to form the resistive switching layer of a Cu/SiOx/Pt memory device. The SiOx-based device demonstrates the resistive switching characteristics with an electrochemical reaction. CF4plasm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a3965ee50dd99b69ac67e71f53e279da
https://doaj.org/article/4ad50c1bc20e44b0b6bb96d50ed7666b
https://doaj.org/article/4ad50c1bc20e44b0b6bb96d50ed7666b
