Zobrazeno 1 - 10
of 100
pro vyhledávání: '"Wen-Tai Lin"'
Autor:
Wen-tai Lin, 林文泰
97
The economy of Taiwan is developed fast and the whole life style is changed so much. The major cause of mortality is chronic disease rather than infection disease. Therefore the old disease prevention project of people health plan is the most
The economy of Taiwan is developed fast and the whole life style is changed so much. The major cause of mortality is chronic disease rather than infection disease. Therefore the old disease prevention project of people health plan is the most
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/53284646976061422774
Autor:
Wen-Tai Lin, 林文泰
94
In this thesis, the electromechanical property of a piezoelectric (PZT) element was studied based on Martin equivalent circuit in which the input port is the excitation voltage and the output ports are the generating forces of PZT element. Th
In this thesis, the electromechanical property of a piezoelectric (PZT) element was studied based on Martin equivalent circuit in which the input port is the excitation voltage and the output ports are the generating forces of PZT element. Th
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/20048227992277152881
Publikováno v:
Ceramics International. 43:5819-5822
Chalcopyrite copper indium sulfide (CuInS 2 , CIS) has a bandgap that is optimal for a solar energy conversion material. In this paper, we used a polymer-type ion release source to control the precursor concentration of the hydrothermal system to gro
Publikováno v:
Journal of Alloys and Compounds. 646:1015-1022
The tunable bandgap of Cu 2 (Zn 1−x Co x )SnS 4 and Cu 2 (Fe 1−x Co x )SnS 4 nanocrystals synthesized by the one-pot and hot-injection methods respectively was explored as a function of the Co concentration. The Co(CH 3 COO) 2 precursor is superi
Publikováno v:
Optik. 125:942-945
A modified phase generation carrier technique used in fiber-optic distributed disturbance sensor (FDDS) is proposed and investigated. The FDDS locates the disturbance by dual Mach–Zehnder (MZ) interferometers, however, the initializing phase error
Publikováno v:
CrystEngComm. 16:1786-1792
The phase formation, morphology evolution and bandgap of Sn1−xSbxSe (0 ≤ x ≤ 0.6) nanocrystals synthesized at 230–275 °C for 5–36 h in a one-pot system were studied. Sn2+ is kinetically more reactive than Sb3+ toward Se2−. The SnSe(1) ph
Publikováno v:
Thin Solid Films. 544:291-295
The effects of hydrazine on the synthesis of Cu 2 ZnSnSe 4 (CZTSe) and Cu 2 CdSnSe 4 (CCTSe) nanocrystals in an autoclave as a function of temperature and time were explored. On heating at 190 °C for 24-72 h, pure CZTSe and CCTSe nanocrystals could
Publikováno v:
Journal of Physics and Chemistry of Solids. 73:948-952
The tunable growth of In-doped Ga2O3 (Ga2O3:In) and Ga-doped In2O3 (In2O3:Ga) nanowires (NWs) on Au-coated Si substrates was achieved by modulating the amount of water vapor in flowing Ar at 700–750 °C via carbothermal reduction of Ga2O3/In2O3 pow
Publikováno v:
Journal of Nanoscience and Nanotechnology. 11:11190-11194
The growth of porous ZnO nanowires (NWs) via phase transformation of ZnS NWs at 500-850 degrees C in air was studied. The ZnS NWs were first synthesized by thermal evaporation of ZnS powder at 1100 degrees C in Ar. On subsequent annealing at 500 degr
Publikováno v:
Journal of Nanoscience and Nanotechnology. 10:4773-4776
The Ag-catalyzed growth of straight Ge nanowires (GeNWs), serrated Ge nanobelts (GeNBs), and hexagonal Ge nanotowers (GeNTs) by thermal evaporation of Ge powder at 950 degrees C in Ar was studied. The growth of GeNWs and GeNBs at 550-600 degrees C fo