Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Wen-Sheng Feng"'
Autor:
Wen-Sheng Feng, Wei-Cheng Chen, Jiun-Yi Lin, How-Yang Tseng, Chieh-Lung Chen, Ching-Yao Chou, Der-Yang Cho, Yi-Bing Lin
Publikováno v:
Sensors, Vol 24, Iss 12, p 3929 (2024)
The rapid advancements in Artificial Intelligence of Things (AIoT) are pivotal for the healthcare sector, especially as the world approaches an aging society which will be reached by 2050. This paper presents an innovative AIoT-enabled data fusion sy
Externí odkaz:
https://doaj.org/article/10b0e6e2fc6646109bbf22a552ceae00
Publikováno v:
Thin Solid Films. 555:153-158
This work presents a physicochemical analysis of the characteristics of high-k lanthanum aluminate LaAlO3 (LAO) that is deposited on indium tin oxide (ITO)/glass substrates by pulsed laser deposition at various oxygen pressures and then undergoes low
Autor:
Wen Sheng Feng, 馮文聲
98
In this thesis, we have studied the fabricated of metal-insulator-metal oxide (MIM) capacitors structure. We deposited high dielectric constant LaAlO3 by pulsed laser deposition. Study electrical and physical characterization deposited with d
In this thesis, we have studied the fabricated of metal-insulator-metal oxide (MIM) capacitors structure. We deposited high dielectric constant LaAlO3 by pulsed laser deposition. Study electrical and physical characterization deposited with d
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/35560593589012342936
Autor:
Wen-Sheng Feng, Jyun-Ning Chen, Po-Hsiu Chien, C. J. Tseng, Kou-Chen Liu, Jung-Ruey Tsai, Chi-Shiau Li
Publikováno v:
Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials.
Publikováno v:
Japanese Journal of Applied Physics. 49:04DF21
A full room-temperature-fabricated ZnO-based thin-film transistor (TFT) has been demonstrated in this study using a gate dielectric of gadolinium oxide (Gd2O3) thin films. This is the first report on the use of Gd2O3 films as the gate insulator for a
Autor:
Wen Sheng Feng, 馮文聲
98
In this thesis, we have studied the fabricated of metal-insulator-metal oxide (MIM) capacitors structure. We deposited high dielectric constant LaAlO3 by pulsed laser deposition. Study electrical and physical characterization deposited with d
In this thesis, we have studied the fabricated of metal-insulator-metal oxide (MIM) capacitors structure. We deposited high dielectric constant LaAlO3 by pulsed laser deposition. Study electrical and physical characterization deposited with d
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/32575508284474455331