Zobrazeno 1 - 10
of 90
pro vyhledávání: '"Wen-Jeng Hsueh"'
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-7 (2023)
Abstract The usage of two-dimensional (2D) materials will be very advantageous for many developing spintronic device designs, providing a superior method of managing spin. Non-volatile memory technologies, particularly magnetic random-access memories
Externí odkaz:
https://doaj.org/article/b400aee62db7423699b26d859093dc7b
Publikováno v:
iScience, Vol 26, Iss 4, Pp 106400- (2023)
Summary: Traditional photonic systems are endowed with brand new properties owing to the addition of topological physics with light. A conjugated topological cavity-states (CTCS) in one-dimensional photonic systems is presented, which has not only ro
Externí odkaz:
https://doaj.org/article/ca57526785234317951c086a2b3b73a2
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-7 (2021)
Abstract The optical properties of topological photonics have attracted much interest recently because its potential applications for robust unidirectional transmission that are immune to scattering at disorder. However, researches on topological ser
Externí odkaz:
https://doaj.org/article/6db1fc5299d9446182b8977d2ef53ca6
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-8 (2021)
Abstract Topological insulators (TI) have extremely high potential in spintronic applications. Here, a topological insulators thin-film (TITF) spin valve with the use of the segment gate-controlled potential exhibits a huge magnetoresistance (MR) val
Externí odkaz:
https://doaj.org/article/d32d8bf1484641cc9abd4f0fccf6ae94
Autor:
Pei-Te Lin, Jia-Wei Chang, Syuan-Ruei Chang, Zhong-Kai Li, Wei-Zhi Chen, Jui-Hsuan Huang, Yu-Zhen Ji, Wen-Jeng Hsueh, Chun-Ying Huang
Publikováno v:
Crystals, Vol 11, Iss 3, p 259 (2021)
Ge-based Schottky diodes find applications in high-speed devices. However, Fermi-level pinning is a major issue for the development of Ge-based diodes. This study fabricates a Pt/carbon paste (CP)/Ge Schottky diode using low-cost CP as an interlayer.
Externí odkaz:
https://doaj.org/article/5962842e446d411eb90ce163fbb0581b
Publikováno v:
New Journal of Physics, Vol 22, Iss 9, p 093005 (2020)
Spin-transfer torque (STT) applications in magnetization switching such as magnetic tunnel junctions (MTJs) have been of popular interest in the development of novel memory technologies. However, the high switching power associated with these is a cr
Externí odkaz:
https://doaj.org/article/cacaa77a8bf6468494b5bf96b1ffe5d7
Autor:
Peng Tseng, Wen-Jeng Hsueh
Publikováno v:
New Journal of Physics, Vol 21, Iss 11, p 113035 (2019)
Pursuing larger tunnel magnetoresistance is a significant work to develop attractive spin-valve devices for high-performance read heads of hard disk drives, magnetic random access memories, and transistors. Here, we propose an ultra-giant magnetoresi
Externí odkaz:
https://doaj.org/article/938a0056cd4841e0b707f122fb4ef95b
Autor:
Yan-Fong Lin, Bo-Chang Dong, Bo-Rui Chen, Li-Zhen Lin, Yung-Yi Chang, Min-Hsin Wu, Po-Yu Su, Bo-Cheng Chen, Wen-Jeng Hsueh, Chun-Ying Huang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abae5cd462a15bb3ad4e3fe6b86922a5
https://doi.org/10.2139/ssrn.4399109
https://doi.org/10.2139/ssrn.4399109
Autor:
Pei-Te Lin, Chih-Ying Yu, Sin-Huei Ho, Shiuan-Wei Pan, Jyun-Siang Jhang, Yi-Xun Zhang, Yo-Lun Zhang, Tian-Tsz Hsieh, Hao-Chien Wang, Wen-Jeng Hsueh, Chun-Ying Huang
Publikováno v:
Journal of The Electrochemical Society. 170:037515
The photochemical activation process is a promising way to operate metal oxide gas sensors at room temperature. However, this technique is only used in n-type semiconductors. In this study, we report a highly stable p-type copper gallium oxide (CuGaO
Publikováno v:
Microelectronics Reliability. 139:114803