Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Wen-Hua Kao"'
Autor:
Wen-Hua Kao, 高文華
102
In this study, we report the effects of the various parameters such as Zn:Te ratio, annealing temperature (200~400oC), and Bi additions (10~40wt%) on the properties of ZnTe/Bi-doped ZnTe thin films are investigated and discussed. The physica
In this study, we report the effects of the various parameters such as Zn:Te ratio, annealing temperature (200~400oC), and Bi additions (10~40wt%) on the properties of ZnTe/Bi-doped ZnTe thin films are investigated and discussed. The physica
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/00189955212303861527
Publikováno v:
Ferroelectrics. 491:118-126
Zinc telluride thin films were deposited by thermal evaporation method on n-type Si substrate. The electrical properties of these films were investigated with special emphasis on the effects of a depositing temperature from 520°C to 560°C with vari
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ab2050af4b0a3a3a9a5d5afaff0878f
https://doi.org/10.1080/00150193.2015.1071135
https://doi.org/10.1080/00150193.2015.1071135
Autor:
Jenn Sen Lin, Ye Mu Lee, Yi Ting Yu, Pai Chuan Yang, Wen Hua Kao, Ching Fang Tseng, Wen Shiush Chen, Chun Hung Lai, Hsi Wen Yang, Cheng-Hsing Hsu
Publikováno v:
Applied Mechanics and Materials. 535:688-691
Thermal coating growth of ZnTe thermoelectric films were deposited on n-type Si substrate is studied. Structural analysis through x-ray diffraction (XRD) and scanning electron microscopy (SEM) were sensitive to the RTA treatment. The electrical prope
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c40f12abb1733834acd50ea10ac7e41
https://doi.org/10.4028/www.scientific.net/amm.535.688
https://doi.org/10.4028/www.scientific.net/amm.535.688
Autor:
Ching Fang Tseng, Yi Ting Yu, Shin-Pon Ju, Shih Syun Wei, Wen Shiush Chen, Cheng-Hsing Hsu, Jenn Sen Lin, Wen Hua Kao, Jian-Ming Lu, Chun Hung Lai
Publikováno v:
Advanced Materials Research. :569-572
The microstructure and electrical properties of ZnTe films were investigated by using thermal evaporation with emphasis on the effects of a deposition temperature. Microstructure, crystallinity, carrier concentration, resistivity, and mobility are sh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31acfb7e407629b76ddccc96031dff45
https://doi.org/10.4028/www.scientific.net/amr.690-693.569
https://doi.org/10.4028/www.scientific.net/amr.690-693.569
Autor:
Cheng-Hsing Hsu, Jin-Yuan Hsieh, Shin-Pon Ju, Jenn-Sen Lin, Shih-Syun Wei, Wen-Shiush Chen, Jian-Ming Lu, Chun Hung Lai, Ching-Fang Tseng, Yi-Ting Yu, Wen-Hua Kao
Publikováno v:
SPIE Proceedings.
Zinc telluride (ZnTe) compound is one of the attractive elements of the II–VI group also having wide range of applications such as switching devices, light-emitting diode, solar cells and photodetectors. In this paper, the microstructure and electr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30dc9ee71fff9f5cf71437d3638b2a57
https://doi.org/10.1117/12.2033133
https://doi.org/10.1117/12.2033133