Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Wen-Hsing Liu"'
Publikováno v:
Team Performance Management, 2015, Vol. 21, Issue 7/8, pp. 361-385.
Externí odkaz:
http://www.emeraldinsight.com/doi/10.1108/TPM-03-2015-0012
Autor:
Wen-Hsing Liu, Zun-Hwa Chiang
Publikováno v:
ICKII
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f1d6ee0aa9f41558cdb77b7d0364ec9
https://doi.org/10.1109/ickii.2018.8569133
https://doi.org/10.1109/ickii.2018.8569133
Publikováno v:
Team Performance Management. 21:361-385
Purpose – The purpose of this study is to identify inhibitors and enablers of Kaizen event effectiveness, as perceived by participants, and categorize them into shared mental models to understand the factors participants believe to be affecting Kai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d46340664cf7815e0171ed2b5bc101c
https://doi.org/10.1108/tpm-03-2015-0012
https://doi.org/10.1108/tpm-03-2015-0012
Autor:
Wen-Hsing Liu, Alan R. McKendall
Publikováno v:
International Journal of Production Research. 50:867-878
A manufacturing facility is a dynamic system that constantly evolves due to changes such as changes in product demands, product designs, or replacement of production equipment. As a result, the dynamic facility layout problem (DFLP) considers these c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::687b07902d9449603f1d855bf9a0cae3
https://doi.org/10.1080/00207543.2010.545446
https://doi.org/10.1080/00207543.2010.545446
Autor:
Lijie Zhang, Shyh-Shyuan Sheu, Wen-Hsing Liu, Heng-Yuan Lee, Yu-Sheng Chen, Ru Huang, Ming-Jinn Tsai, Wei-Su Chen, SuMin Wang, Chen-Han Tsai, Pang-Shiu Chen, Frederick T. Chen, Yen-Ya Hsu, Pei-Yi Gu
Publikováno v:
Science China Information Sciences. 54:1073-1086
Resistive random access memory (RRAM or ReRAM) is a non-volatile memory (NVM) technology that consumes minimal energy while offering sub-nanosecond switching. In addition, the data stability against high temperature and cycling wear is very robust, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e973fd92cf9dae7c541235fe9dc1acb4
https://doi.org/10.1007/s11432-011-4217-8
https://doi.org/10.1007/s11432-011-4217-8
Autor:
Pei-Chia Chiang, Wei-Chou Hsu, Ming-Jinn Tsai, Ming-Jer Kao, Meng-Hsueh Chiang, Shyh-Shyuan Sheu, C. Yu, Wen-Hsing Liu, K.-Li Su, Jun-Tin Lin, Yi-Bo Liao, Yen-Ya Hsu
Publikováno v:
IET Computers & Digital Techniques. 4:285-292
In this study, the authors propose non-conventional phase-change memory programming schemes using a comprehensive model, which integrates the underlying electrical and thermal theories. Various pulsing schemes aiming to reduce operation power without
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::caa006395c0bd6d9cefea9a9e2c65ac0
https://doi.org/10.1049/iet-cdt.2009.0037
https://doi.org/10.1049/iet-cdt.2009.0037
Autor:
Wen-Hsing Liu, Ming-Jinn Tsai, Ming-Wei Lai, Wei-Su Chen, Peggy Gu, Pang-Shiu Chen, Yu-Sheng Chen, Heng-Yuan Lee, Chi-Wei Chen, Yen-Ya Hsu, Frederick T. Chen, Shen-Chuan Lo
Publikováno v:
Current Applied Physics. 10:e75-e78
The size dependence of the resistance states of a TiN/HfO 2 /Ti resistance random access memory (ReRAM) metal–insulator–metal (MIM) structure is described in terms of the filament distribution within the structure. We introduce radial distributio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79878b3181b5a95243bb929e1be2ca0a
https://doi.org/10.1016/j.cap.2009.12.018
https://doi.org/10.1016/j.cap.2009.12.018
Autor:
Hsin-Fei Meng, Sheng-fu Horng, Hua Hsien Liao, Chia Ming Yang, Chien Cheng Liu, Wen Hsing Liu
Publikováno v:
Synthetic Metals. 159:1131-1134
Long-time evolution of the electrical characteristics for two-terminal and transistor of poly(3-hexylthiophene) film with various gate dielectric interfaces are measured. The oxygen doping is found to depend sensitively on the amount of hydroxyl grou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e34d4b3c4aa0465763839083d2649f24
https://doi.org/10.1016/j.synthmet.2009.01.048
https://doi.org/10.1016/j.synthmet.2009.01.048