Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Wen Zhengxin"'
Autor:
Lei Wang, Xingfang Liu, Yan Guoguo, Wanshun Zhao, Shen Zhanwei, Guosheng Sun, Feng Zhang, Yiping Zeng, Wen Zhengxin
Publikováno v:
IEEE Transactions on Electron Devices. 67:4046-4053
A reverse-channel 4H-SiC trench gate metal-oxide-semiconductor field-effect transistor (UMOSFET) (RC-MOS) is proposed in this article. The RC-MOS is demonstrated to have low specific ON-resistance ( $R_{\mathrm{ON,sp}}$ ) by numerical simulation. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72fa2462dd3a45924e3cebcfda13150b
https://doi.org/10.1109/ted.2020.3005899
https://doi.org/10.1109/ted.2020.3005899
Autor:
Yinshu Wang, Bowen Lv, Guosheng Sun, Wen Zhengxin, Yiping Zeng, Yan Guoguo, Lei Wang, Xingfang Liu, Chao Liu, Shen Zhanwei, Feng Zhang, Wanshun Zhao, Jun Chen
Publikováno v:
Materials Science in Semiconductor Processing. 94:107-115
We have investigated and compared the influence of annealing temperature on composition and interfacial properties of AlN thin films deposited on 4H-SiC substrates by atomic layer deposition using trimethylaluminum (TMA) and ammonia as precursors at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::788be2c28bccbe35a4c217d4235daea2
https://doi.org/10.1016/j.mssp.2019.01.045
https://doi.org/10.1016/j.mssp.2019.01.045
Autor:
Yiping Zeng, Wanshun Zhao, Junxiu Chen, Guo Sheng Sun, Fangfang Zhang, Min-Xin Guan, Yan Guoguo, Shen Zhanwei, Youping He, Xingfang Liu, Lishuang Wang, Wen Zhengxin
Publikováno v:
Journal of Crystal Growth. 507:283-287
Although homoepitaxial growth of multiple 4H-SiC wafers in one run can be realized in commercial specialized chemical vapor deposition equipment, wafers must be loaded onto a rotatable large susceptor and overspread on it, which leads to the diameter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9845a7b07f956eb90eba2cdd1c6ae53
https://doi.org/10.1016/j.jcrysgro.2018.10.055
https://doi.org/10.1016/j.jcrysgro.2018.10.055
Autor:
Shen Zhanwei, Junxiu Chen, Wen Zhengxin, Xingguo Li, Z.G. Wang, Yan Guoguo, Guo Sheng Sun, Y.P. Zeng, Xiyan Zhang, L. Wang, Xiehe Liu, Fuwang Zhang, Wanshun Zhao
Publikováno v:
Journal of Crystal Growth. 505:1-4
In this paper, thick 4H-SiC epilayers of 147 μm demanded for ultra-high-voltage power devices has been obtained at a high growth rate of 85 µm/h under optimized growth conditions. We have attempted to improve the quality and reduce the surface defe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0fd63477aff0411bb0f08a78699a4a9
https://doi.org/10.1016/j.jcrysgro.2018.09.023
https://doi.org/10.1016/j.jcrysgro.2018.09.023
Autor:
Fangfang Zhang, Xingfang Liu, Wen Zhengxin, Y.P. Zeng, Junxiu Chen, Shen Zhanwei, Yan Guoguo, Guo Sheng Sun, Wanshun Zhao, B. Liu, Lishuang Wang
Publikováno v:
Journal of Crystal Growth. 504:7-12
We present process optimization for rapid homoepitaxial growth of thick 4H-SiC films on 4° off-cut substrates via hydrogen chloride chemical vapor deposition (HCVD). The gas used is a mixture of HCl additive, SiH4, C2H4 and H2. After characterizatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e143ddad7da793291bc6b4ba5aeae931
https://doi.org/10.1016/j.jcrysgro.2018.09.030
https://doi.org/10.1016/j.jcrysgro.2018.09.030
Akademický článek
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Autor:
Yiping Zeng, Feng Zhang, Lixin Tian, Yan Guoguo, Wen Zhengxin, Lei Wang, Xingfang Liu, Wanshun Zhao, Guosheng Sun, Shen Zhanwei
Publikováno v:
IEEE Electron Device Letters. 38:941-944
A silicon carbide (SiC) injection enhanced gate transistor with accumulation channel (AC-IEGT) is proposed in this letter, which has a barrier layer with small windows under the p+ shielding region. The new structure can enhance electron injection th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::face5fbb3625ea61cb6360741cd3644e
https://doi.org/10.1109/led.2017.2709322
https://doi.org/10.1109/led.2017.2709322
Autor:
Yiping Zeng, Wanshun Zhao, Lixin Tian, Feng Zhang, Sima Dimitrijev, Lei Wang, Shen Zhanwei, Xingfang Liu, Jisheng Han, Guosheng Sun, Wen Zhengxin, Yan Guoguo
Publikováno v:
Materials Science Forum. 897:719-722
This work presents theoretical demonstration of two-dimensional electron gas (2DEG) at the interface between Al0.2Ga0.8N and 4H-SiC, based on the self-consistent solution of Schrödinger–Poisson equations. High sheet carrier density of 1.1×1013 cm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eeacd4b9ae8bb9ed66476db37047f8fb
https://doi.org/10.4028/www.scientific.net/msf.897.719
https://doi.org/10.4028/www.scientific.net/msf.897.719
Autor:
Fangfang Zhang, Wanshun Zhao, Xingfang Liu, Guo Sheng Sun, Lishuang Wang, Yan Guoguo, Min-Xin Guan, Shen Zhanwei, Y.P. Zeng, Lixin Tian, Wen Zhengxin
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:P27-P31
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2f0896a4e6c382c382b3ccbc28a2d12
https://doi.org/10.1149/2.0121701jss
https://doi.org/10.1149/2.0121701jss
Autor:
Y.X. Niu, Shen Zhanwei, Guo Sheng Sun, Y.P. Zeng, Youping He, Fuwang Zhang, Min-Xin Guan, Xiehe Liu, Yan Guoguo, Ling Sang, Wen Zhengxin, Junxiu Chen, Wanshun Zhao, L. Wang
Publikováno v:
Journal of Crystal Growth. 531:125359
Epitaxial defects such as threading screw dislocation (TSD), basal plane dislocation (BPD) and so on will seriously reduce the reverse voltage or increase leakage current of power devices. We studied the classification and statistics of the above sev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95ca53d9a14f1ec79dec7b0e58f6d6a1
https://doi.org/10.1016/j.jcrysgro.2019.125359
https://doi.org/10.1016/j.jcrysgro.2019.125359