Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Wen Yu Shiao"'
This study coated CrN films onto oxynitriding-treated Vanadis 23 high-speed steel using the DC magnetron sputtering process of the PVD technique. The experimental parameters include various deposition temperatures (275, 300, 325, and 350°C), a bias
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42024fb7e42095b6c5ea6280ce0ca2d2
https://doi.org/10.21203/rs.3.rs-2619073/v1
https://doi.org/10.21203/rs.3.rs-2619073/v1
Publikováno v:
MATERIALS TRANSACTIONS.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48a50e8d8d4ca741a4e1adf93d17e07b
https://doi.org/10.2320/matertrans.mt-m2023044
https://doi.org/10.2320/matertrans.mt-m2023044
Autor:
Wen-Yu Shiao, Chun-Yung Chi, Shu-Cheng Chin, Chi-Feng Huang, Tsung-Yi Tang, Yen-Cheng Lu, Yu-Li Lin, Lin Hong, Fang-Yi Jen, C. C. Yang, Bao-Ping Zhang, Segawa, Yusaburo
Publikováno v:
Journal of Applied Physics; 3/1/2006, Vol. 99 Issue 5, p054301, 6p, 6 Black and White Photographs, 5 Graphs
Autor:
Tsung-Yi Tang, Wen-Yu Shiao, Cheng-Hung Lin, Che-Hao Liao, Ming-Chi Hsu, Yung-Sheng Chen, Chih-Chung Yang, Kun-Ching Shen, Wen-Ming Chang, Ta-Cheng Hsu, Jui-Hung Yeh
Publikováno v:
IEEE Transactions on Electron Devices. 57:71-78
The progress of light-emitting-diode (LED) development based on nitride nanocolumn (NC) growth, including InGaN/GaN quantum-well (QW) growth on NCs and regularly arranged GaN NC growth, is first reviewed. Then, the coalescence-overgrowth results base
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a149e9ba88bf043b0ccd5a27a366c2c
https://doi.org/10.1109/ted.2009.2034795
https://doi.org/10.1109/ted.2009.2034795
Autor:
Yung-Sheng Chen, Cheng-Yen Chen, Yen-Cheng Lu, Wen-Yu Shiao, Chi-Feng Huang, Chih-Chung Yang, Chih-Feng Lu
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 15:1210-1217
Phosphor-free monolithic InGaN-based white-light LED has the advantages of simpler device process and potentially higher efficiency. Several techniques have been developed for implementing such white-light LEDs. Among them, the key issue is the growt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37a1726087a9074ca00cca723aab004a
https://doi.org/10.1109/jstqe.2009.2013184
https://doi.org/10.1109/jstqe.2009.2013184
Autor:
John D. Albrecht, Chih-Chung Yang, Yung-Sheng Chen, Tsung Yi Tang, K. L. Averett, Wen Yu Shiao
Publikováno v:
Journal of Crystal Growth. 310:3159-3162
The crystal quality, as determined by X-ray diffraction, of GaN epitaxial films synthesized by MOCVD overgrowth of oriented GaN nanocolumns on Si(1 1 1) is studied as a function of film thickness and compared with control films grown on sapphire subs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2571a0e42ece7166d4bbdbf831772a7
https://doi.org/10.1016/j.jcrysgro.2008.04.006
https://doi.org/10.1016/j.jcrysgro.2008.04.006
Autor:
Jeng-Jie Huang, Li-Chieh Yao, Yung-Sheng Chen, Chih-Chung Yang, Chi-Feng Huang, Tsung-Yi Tang, Wen-Yu Shiao, Y. H. Lin, L. Hung
Publikováno v:
Journal of Crystal Growth. 297:66-73
We use the techniques of high-resolution transmission electron microscopy and strain state analysis (SSA) to show the material nanostructures of two InGaN/GaN quantum-well (QW) samples. In one of the samples, a low-indium InGaN/GaN QW is grown before
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f15a0313f36d6db5b5aa0f20c4d0832c
https://doi.org/10.1016/j.jcrysgro.2006.08.040
https://doi.org/10.1016/j.jcrysgro.2006.08.040
Autor:
Jian-Jang Huang, I-Shuo Liu, Chih-Chung Yang, Wen-Yu Shiao, Horng-Shyang Chen, Wei-Fang Su, Chih-Feng Lu, Chi-Feng Huang, Dong-Ming Yeh
Publikováno v:
IEEE Photonics Technology Letters. 18:1430-1432
We grew and processed a blue/green two-wavelength light-emitting diode (LED) based on the mixture of two kinds of quantum wells (QW) in epitaxial growth. The X-ray diffraction and photoluminescence measurements indicated that the crystalline structur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99c1330c681dbdf97feefde4df75bab2
https://doi.org/10.1109/lpt.2006.877551
https://doi.org/10.1109/lpt.2006.877551
Autor:
Wen-Yu Shiao, 蕭文裕
97
In this dissertation, we utilize X-ray diffraction technique to characterize InGaN/GaN nanostructures. First, we compare the X-ray diffraction (XRD) results of two InGaN/GaN quantum-well (QW) structures to observe the effects of prestrained g
In this dissertation, we utilize X-ray diffraction technique to characterize InGaN/GaN nanostructures. First, we compare the X-ray diffraction (XRD) results of two InGaN/GaN quantum-well (QW) structures to observe the effects of prestrained g
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/14876168876168539602
Autor:
Yung-Sheng Chen, John D. Albrecht, Chih-Chung Yang, Tsung-Yi Tang, Wen-Yu Shiao, Kent L. Averett
Publikováno v:
2008 International Nano-Optoelectronics Workshop.
Coalescence overgrowth of GaN nanocolumns on Si and sapphire substrates with metalorganic chemical vapor deposition is implemented to show high crystal and optical qualities. Depth-dependent X-ray diffraction is realized to understand the coalescence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdb7edae8a618d094782de70bee9e2fd
https://doi.org/10.1109/inow.2008.4634477
https://doi.org/10.1109/inow.2008.4634477