Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Wen Tai Lu"'
Publikováno v:
IEEE Electron Device Letters. 27:240-242
Effects of fluorine (F) incorporation on the reliabilities of pMOSFETs with HfO/sub 2//SiON gate stacks have been studied. In this letter, fluorine was incorporated during the source/drain implant step and was diffused into the gate stacks during sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa99df14e1ab5362f0f090c50235c9b9
https://doi.org/10.1109/led.2006.871539
https://doi.org/10.1109/led.2006.871539
Autor:
Wen Tai Lu, Po Ching Lin, Tiao Yuan Huang, Ing Jyi Huang, Ming Jui Yang, Chao-Hsin Chien, Peer Lehnen
Publikováno v:
Applied Physics Letters. 85:3525-3527
The characteristics of charge trapping during constant voltage stress in an n-type metal–oxide–semiconductor capacitor with HfO2∕SiO2 gate stack and TiN gate electrode were studied. We found that the dominant charge trapping mechanism in the hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac184edc43cedeb7203bdb6202775926
https://doi.org/10.1063/1.1808228
https://doi.org/10.1063/1.1808228
Autor:
Wen-Tai Lu, 盧文泰
94
As CMOS devices are scaled aggressively into nanometer regime, SiO2 gate dielectric is approaching its physical and electrical limits. The primary issue is the intolerably huge leakage current caused by the direct tunneling of carriers throug
As CMOS devices are scaled aggressively into nanometer regime, SiO2 gate dielectric is approaching its physical and electrical limits. The primary issue is the intolerably huge leakage current caused by the direct tunneling of carriers throug
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/59316248403755738419
Autor:
Wen-Tai Lu, 盧文泰
87
Recently, it is reported that more reliable dielectrics grown on the polysilicon can be obtained by using deposited instead of thermally grown dielectrics. Since defects located in the polysilicon are not incorporated into the deposition diel
Recently, it is reported that more reliable dielectrics grown on the polysilicon can be obtained by using deposited instead of thermally grown dielectrics. Since defects located in the polysilicon are not incorporated into the deposition diel
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/76659124467277248855
Autor:
Tiao-Yuan Huang, Peer Lehnen, Ming Jui Yang, Chao-Hsin Chien, Shih Wen Shen, Tsung Chieh Lee, Wen Ting Lan, Wen Tai Lu
Publikováno v:
Japanese Journal of Applied Physics. 44:7869
In this work, we found that employing a post deposition N2O plasma treatment following the deposition of HfO2 film can effectively improve the electrical characteristics of p-type channel metal–oxide–semiconductor field-effect transistors (pMOSFE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::474c13cd7b8c225573eaf0e32f1915d9
https://doi.org/10.1143/jjap.44.7869
https://doi.org/10.1143/jjap.44.7869
Publikováno v:
Journal of The Electrochemical Society. 152:G799
The effects of postdeposition low-temperature (∼400°C) NH 3 treatment (LTN treatment) on the characteristics of the HfO 2 /SiO 2 gate stack with the TiN gate electrode were studied in this work. After the HfO 2 films were deposited using an AIXTRO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1566f2a1d70f726e371b00927dd5ad55
https://doi.org/10.1149/1.2039629
https://doi.org/10.1149/1.2039629
Publikováno v:
IEEE Electron Device Letters; Apr2006, Vol. 27 Issue 4, p240-242, 3p, 5 Graphs
Autor:
Wen-Tai Lu, Po-Ching Lin, Tiao-Yuan Huang, Chao-Hsin Chien, Ming-Jui Yang, Ing-Jyi Huang, Lehnen, Peer
Publikováno v:
Applied Physics Letters; 10/18/2004, Vol. 85 Issue 16, p3525-3527, 3p, 1 Diagram, 3 Graphs