Zobrazeno 1 - 10
of 198
pro vyhledávání: '"Wen Tai Lin"'
Publikováno v:
Ceramics International. 43:5819-5822
Chalcopyrite copper indium sulfide (CuInS 2 , CIS) has a bandgap that is optimal for a solar energy conversion material. In this paper, we used a polymer-type ion release source to control the precursor concentration of the hydrothermal system to gro
Publikováno v:
Journal of Alloys and Compounds. 646:1015-1022
The tunable bandgap of Cu 2 (Zn 1−x Co x )SnS 4 and Cu 2 (Fe 1−x Co x )SnS 4 nanocrystals synthesized by the one-pot and hot-injection methods respectively was explored as a function of the Co concentration. The Co(CH 3 COO) 2 precursor is superi
Publikováno v:
Optik. 125:942-945
A modified phase generation carrier technique used in fiber-optic distributed disturbance sensor (FDDS) is proposed and investigated. The FDDS locates the disturbance by dual Mach–Zehnder (MZ) interferometers, however, the initializing phase error
Publikováno v:
CrystEngComm. 16:1786-1792
The phase formation, morphology evolution and bandgap of Sn1−xSbxSe (0 ≤ x ≤ 0.6) nanocrystals synthesized at 230–275 °C for 5–36 h in a one-pot system were studied. Sn2+ is kinetically more reactive than Sb3+ toward Se2−. The SnSe(1) ph
Publikováno v:
Thin Solid Films. 544:291-295
The effects of hydrazine on the synthesis of Cu 2 ZnSnSe 4 (CZTSe) and Cu 2 CdSnSe 4 (CCTSe) nanocrystals in an autoclave as a function of temperature and time were explored. On heating at 190 °C for 24-72 h, pure CZTSe and CCTSe nanocrystals could
Publikováno v:
Journal of Physics and Chemistry of Solids. 73:948-952
The tunable growth of In-doped Ga2O3 (Ga2O3:In) and Ga-doped In2O3 (In2O3:Ga) nanowires (NWs) on Au-coated Si substrates was achieved by modulating the amount of water vapor in flowing Ar at 700–750 °C via carbothermal reduction of Ga2O3/In2O3 pow
Publikováno v:
Journal of Nanoscience and Nanotechnology. 11:11190-11194
The growth of porous ZnO nanowires (NWs) via phase transformation of ZnS NWs at 500-850 degrees C in air was studied. The ZnS NWs were first synthesized by thermal evaporation of ZnS powder at 1100 degrees C in Ar. On subsequent annealing at 500 degr
Publikováno v:
Journal of Nanoscience and Nanotechnology. 10:4773-4776
The Ag-catalyzed growth of straight Ge nanowires (GeNWs), serrated Ge nanobelts (GeNBs), and hexagonal Ge nanotowers (GeNTs) by thermal evaporation of Ge powder at 950 degrees C in Ar was studied. The growth of GeNWs and GeNBs at 550-600 degrees C fo
Publikováno v:
Japanese Journal of Applied Physics. 47:3299-3302
The enhanced growth of Ge–GeOx core–shell nanowires (Ge–GeOx NWs) on Cu-coated Si substrates via the carbothermal reduction of GeO2 powder at 1100 °C in moist Ar was studied. In dry Ar, the amount of Ge–GeOx NWs increased with the thickness
Publikováno v:
Journal of Materials Research. 22:1618-1623
Si1−xGexOynanowire (SiGeONW) assemblies with cord-, chain-, and tubelike morphologies were grown on a Si substrate via the carbothermal reduction of GeO2/CuO powders at 1100 °C in Ar. The growth of various SiGeONWs assemblies follows the vapor-liq